公开(公告)号：WO2023023526A1

公开(公告)日：2023-02-23

申请号：PCT/US2022/075035

申请日：2022-08-16

Applicant: LAM RESEARCH CORPORATION

Inventor： KANAKASABAPATHY, Sivananda Krishnan ,  TUCKER, Jeremy Todd ,  ONG, Seng ,  HUBACEK, Jerome S.

IPC: H01L21/67 ,  H01L21/687 ,  G03F7/16 ,  C23C16/458 ,  C23C16/46

Abstract: Provided herein are various apparatuses and systems for providing edge heating of semiconductor wafers using optical means. Such systems may direct radiant energy towards the edge region of a semiconductor wafer.

公开(公告)号：WO2021113131A1

公开(公告)日：2021-06-10

申请号：PCT/US2020/062108

申请日：2020-11-24

Applicant: LAM RESEARCH CORPORATION

Inventor： ANDERSON, Collin Michael ,  MOSELY, Roderick ,  DRAEGER, Nerissa Sue ,  HUBACEK, Jerome S.

IPC: G01N21/88 ,  G01N21/89 ,  G02B21/36 ,  H01L21/67

Abstract: Various embodiments include reflective-mode Fourier ptychographic microscope (RFPM) apparatuses and methods for using the RFPM. In one example, the RFPM includes a multiple-component light source configured to direct radiation to a surface. The multiple-component light source has a number of individual-light sources, each of which is configured to be activated individually. The RFPM further includes collection optics to receive radiation reflected and scattered or otherwise redirected from the surface, and a sensor element to convert received light-energy from the collection optics into an electrical-signal output. Other apparatuses, designs, and methods are disclosed.

公开(公告)号：WO2022266140A1

公开(公告)日：2022-12-22

申请号：PCT/US2022/033488

申请日：2022-06-14

Applicant: LAM RESEARCH CORPORATION

Inventor： KANAKASABAPATHY, Sivananda Krishnan ,  HUBACEK, Jerome S. ,  PETER, Daniel ,  TAN, Samantha S.H.

IPC: G03F7/36 ,  H01L21/67

Abstract: Disclosed herein are radiative heating systems and methods for use with dry development processes. Such systems and methods may, in some instances, allow for volatile halides that may be trapped on the surface of a wafer after dry development processing has completed to be driven out of the wafer through radiative heating thereof. Such systems and methods may, in some instances, be provided in an in-situ context in which the wafers being heated are radiatively heated within the same chamber as the dry development process is performed. In other contexts, such radiative heating may be performed in other locations, e.g., as the wafer transits from the processing chamber to another chamber or in another chamber entirely.

公开(公告)号：WO2002031219A1

公开(公告)日：2002-04-18

申请号：PCT/US2001/030286

申请日：2001-09-26

Applicant: LAM RESEARCH CORPORATION ,  HUBACEK, Jerome S.

Inventor： HUBACEK, Jerome S.

IPC: C23C16/00

CPC classification number: H01L21/67109 ,  C23C16/4585 ,  C23C16/4586 ,  H01J2237/32 ,  H01L21/6831 ,  Y10T279/23

Abstract: A coupling ring assembly including an edge ring supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.

Abstract translation: 一种联接环组件，包括由静电边缘环卡盘支撑的边缘环和改进等离子体处理室中的边缘环的温度控制的方法。 边缘环可以由诸如硅或碳化硅的导电材料制成，并且可以通过在边缘环的相对表面和边缘环卡盘之间提供诸如氦的传热气体来增强边缘环的温度控制。