摘要:
Metal-containing films may be formed by atomic layer deposition using precursors of the formula:
M(OR 1 )(OR 2 )(R 3 C(O)C(R 4 )C(O)XR 5 y ) 2
wherein M is Group 4 metals; wherein R 1 and R 2 are independently selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls; R 3 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably C 1-3 alkyl; R 4 is selected from the group consisting of hydrogen, C 1-10 alkyls, and C 6-12 aryls, and is preferably hydrogen; R 5 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably a methyl or ethyl group; and X = O or N, wherein when X = O, y = 1 and R 1 , 2 and 5 are the same, and when X = N, y = 2 and each R 5 can be the same or different.
摘要:
Metal-containing films may be formed by atomic layer deposition using precursors of the formula:
wherein M is Group 4 metals; wherein R 1 and R 2 are independently selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls; R 3 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably C 1-3 alkyl; R 4 is selected from the group consisting of hydrogen, C 1-10 alkyls, and C 6-12 aryls, and is preferably hydrogen; R 5 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably a methyl or ethyl group; and X = O or N, wherein when X = O, y = 1 and R 1 , 2 and 5 are the same, and when X = N, y = 2 and each R 5 can be the same or different.
摘要翻译:含金属膜可以通过原子层沉积形成,使用下式的前体:€ƒ€ƒ€ƒ€ƒ€ƒM(OR 1)(OR 2)(R 3 C(O)C R 4)C(O)XR 5 y)2其中M是4族金属; 其中R 1和R 2独立地选自直链或支链C 1-10烷基和C 6-12芳基; R 3选自直链或支链C 1-10烷基和C 6-12芳基,优选C 1-3烷基; R 4选自氢,C 1-10烷基和C 6-12芳基,优选为氢; R 5选自直链或支链C 1-10烷基和C 6-12芳基,优选甲基或乙基; 并且X = O或N,其中当X = O时,y = 1且R 1,2和5相同,并且当X = N,y = 2且每个R 5可以相同或不同时。
摘要:
Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane.
摘要:
A vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel, the vessel comprising: an interior volume defined by a top, one or more sidewalls, and a base; and at least one fluid outlet for vaporized precursor, and at least one particle barrier that defines at least one particle restricted space within the interior volume, wherein said particle barrier comprises at least one 3-dimensional filter. A method for using the apparatus is also disclosed.
摘要:
Group 4 metal containing films may be deposited using a new family of Group 4 metal precursors represented by the formula:
wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R 1 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably methyl, ethyl or n-propyl; R 2 is selected from the group consisting of branched C 3-10 alkyls and C 6-12 aryls, and is preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl; and R 3 is selected from the group consisting of hydrogen, C 1-10 alkyls, and C 6-12 aryls, and is preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60°C.
摘要:
The invention relates to electrolyte salts for electrochemical devices of improved physical, chemical and electrochemical stability. The improvement resides in the use of anions of salts of the formula comprising: i) (B 12 F x Z 12-x ) 2- wherein Z comprises at least one of H, Cl, Br or OR; R comprises at least one of H, alkyl or fluoroalkyl, or at least one polymer and x is at least 3 on an average basis but not more than 12; ii) ((R'R''R''')NB 12 F x Z (11-x) ) - , wherein N is bonded to B and each of R', R", R''' comprise a member independently selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl and a polymer; Z comprises H, Cl, Br, or OR, where R comprises H, alkyl or perfluoroalkyl or a polymer, and x is an integer from 0 to 11; or iii) (R""CB 11 F x Z (11-x) ) - , wherein R"" is bonded to C and comprises a member selected from the group consisting of hydrogen, alkyl, cycloalkyl, aryl, and a polymer, Z comprises H, Cl, Br, or OR, wherein R comprises H, alkyl or perfluoroalkyl or a polymer, and x is an integer from 0 to 11.
摘要翻译:本发明涉及具有改进的物理,化学和电化学稳定性的电化学装置的电解质盐。 改进在于使用下式的盐阴离子,包括:i)(B 12 F x Z 12-x)2-其中Z包括H,Cl,Br或OR中的至少一个; R包括H,烷基或氟烷基或至少一种聚合物中的至少一种,x平均为至少3,但不超过12; ii)((R'R''R“')NB 12 F x Z(11-x)) - ,其中N键合到B,R',R”,R“'各自独立地包括一个成员 选自氢,烷基,环烷基,芳基和聚合物; Z包括H,Cl,Br或OR,其中R包括H,烷基或全氟烷基或聚合物,x是0至11的整数; 或iii)(R“”CB 11 F x Z(11-x)) - ,其中R“”与C键合,并且包含选自氢,烷基,环烷基,芳基和聚合物的成员, Z包括H,Cl,Br或OR,其中R包括H,烷基或全氟烷基或聚合物,x是0至11的整数。
摘要:
This idea relates to the synthesis of salts of dodecahydrododecaborate B12H12 (2-). In the proposed process a metal hydride is reacted with an alkyl borate in the presence of a Lewis base to produce Lewis base-borane complex, which is thermally decomposed to produce salts of B12H12 (2-), while alkyl borate is recovered from the reaction by-product and is recycled.
摘要:
A solid state composition is provided having the formula Cu(A) n Z, where A is CO or olefin, n > 1 and Z is a unitary or composite monovalent anion. Further provided are an apparatus adapted to adsorb and a method for adsorbing an adsorbate A from a fluid mixture. The apparatus and method employ an adsorbent having the formula Cu(A) n Z, where A is CO or olefin, n ≥ 0 and Z is a unitary or composite monovalent anion. Z can be selected from the group consisting of: a) X - where X - is BF 4 - , PF 6 - or SbF 6 - ; b) (Al x (OR) y ) - where R is fluoroalkyl or perfluoroalkyl, and x is 0 and y is 1, or x is 1 and y is 4; c) (RCO 2 ) - where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; d) (RSO 3 ) - where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; e) (H(RCO 2 ) 2 ) - where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; f) (H(RSO 3 ) 2 ) - where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl; g) (N(SO 2 R) x R' y ) - where R is fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, R' is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, x + y = 2 and x = 1 or 2; h) (C(SO 2 R) x R' y ) - where R is fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, R' is hydrogen, alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl or perfluoroaryl, x + y = 3 and x = 1, 2 or 3; i) (CB 11 H 12-m X m ) - where m is from 0 to 12, and X is at least one member selected from the group consisting of halogen, alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl and perfluoroaryl; j) (CB 9 H 10-m X m ) - where m is from 0 to 10, and X is at least one member selected from the group consisting of halogen, alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl and perfluoroaryl; and k) (CB 11 F 11 R) - where R is alkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl, perfluoroaryl or ammonium.