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    Group 4 metal precursors for metal-containing films
    3.
    发明公开
    Group 4 metal precursors for metal-containing films 有权
    第4族金属前体用于含金属膜

    公开(公告)号：EP2322530A2

    公开(公告)日：2011-05-18

    申请号：EP10188585.3

    申请日：2010-10-22

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Ivanov, Sergei Vladimirovich ,  Lei, Xinjian ,  Cheng, Hansong ,  Spence, Daniel P. ,  Kim Moo-Sung

    IPC分类号： C07F7/00 ,  C23C30/00 ,  C23C16/18

    CPC分类号： C23C16/18 ,  C07F7/006 ,  C23C16/405 ,  C23C16/45553 ,  Y02P20/582

    摘要： Group 4 metal containing films may be deposited using a new family of Group 4 metal precursors represented by the formula:

    wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R 1 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably methyl, ethyl or n-propyl; R 2 is selected from the group consisting of branched C 3-10 alkyls and C 6-12 aryls, and is preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl; and R 3 is selected from the group consisting of hydrogen, C 1-10 alkyls, and C 6-12 aryls, and is preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60°C.

    摘要翻译： 可使用由下式表示的第4族金属前体族来沉积含第4族金属的膜：其中M为Ti，Zr或Hf的第4族金属; 其中R 1选自直链或支链C 1-10烷基和C 6-12芳基，并且优选为甲基，乙基或正丙基; R2选自由支链C 3-10烷基和C 6-12芳基组成的组，并且优选为异丙基，叔丁基，仲丁基，异丁基或叔戊基; 并且R3选自氢，C1-10烷基和C6-12芳基，并且优选为氢。 在本发明的一个优选实施方案中，前体是熔点低于60℃的液体或固体。

    Alkoxysilylamine compounds and applications thereof
    5.
    发明公开
    Alkoxysilylamine compounds and applications thereof 有权
    烷氧基甲酰胺氨基甲酸酯和Anwendungendafür

    公开(公告)号：EP2743272A1

    公开(公告)日：2014-06-18

    申请号：EP13196621.0

    申请日：2013-12-11

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Xiao, Manchao ,  Pearlstein, Ronald Martin ,  Ho, Richard ,  Spence, Daniel P. ,  Lei, Xinjian

    IPC分类号： C07F7/08 ,  C07F7/10 ,  C07F7/18 ,  C23C16/00

    CPC分类号： B65D25/14 ,  C07F7/10 ,  C07F7/1804 ,  C23C16/00

    摘要： Described herein are alkoxysilylamine precursors having the following Formulae A and B:

    wherein R 1 and R 4 are independently selected from a linear or branched C 1 to C 10 alkyl group, a C 3 to C 12 alkenyl group, a C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group and wherein R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from the group consisting of hydrogen, a linear or branched C 1 to C 10 alkyl group, a C 2 to C 12 alkenyl group, a C 2 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl, a C 6 to C 10 aryl group, and a linear or branched C 1 to C 10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

    摘要翻译： 本文描述的是具有以下式A和B的烷氧基甲硅烷基胺前体：其中R 1和R 4独立地选自直链或支链C 1至C 10烷基，C 3至C 12烯基，C 3至C 12 炔基，C 4至C 10环烷基和C 6至C 10芳基，并且其中R 2，R 3，R 4，R 5和R 6独立地选自氢， C 1〜C 10烷基，C 2〜C 12烯基，C 2〜C 12炔基，C 4〜C 10环烷基，C 6〜C 10芳基，直链状 或支链C 1至C 10烷氧基。 本文还描述了使用至少一种前体的沉积方法，其具有本文所述的式A和/或B。

    Precursors for depositing group 4 metal-containing films
    8.
    发明公开
    Precursors for depositing group 4 metal-containing films 有权
    含有起始化合物为层的沉积，所述组4金属

    公开(公告)号：EP2196557A1

    公开(公告)日：2010-06-16

    申请号：EP09178772.1

    申请日：2009-12-10

    申请人： AIR PRODUCTS AND CHEMICALS, INC.

    发明人： Lei, Xinjian ,  Spence, Daniel P. ,  Kim, Moo-Sung ,  Buchanan, Iain ,  Matz, Laura M. ,  Ivanov, Sergei Vladimirovich

    IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C07F3/00 ,  C07F7/00

    CPC分类号： C23C16/455 ,  C07F7/006 ,  C23C16/18 ,  C23C16/40

    摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I:

    wherein M is a metal chosen from Ti, Zr, and Hf; R and R 1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R 2 is an alkyl group comprising from 1 to 10 carbon atoms and R 3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms, or R 2 and R 3 together form a C 2 to C 6 alkylene group; R 4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R 2 and R 4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.

    摘要翻译： 在描述的是第4族含金属前体，一种用于制造共形的含金属在基板上的膜组合物，包含第4族前体包含金属的，和沉积工艺。 在一个方面，第4族含金属前体由下式I表示：worin M是选自Ti，Zr和Hf中选择的金属; R和R 1各自unabhängig从烷基，1至10个含有碳原子的选择; R 2为烷基，其包括1至10个碳原子，且R 3选自氢或烷基，1至3个碳原子，其包括的，或R 2和R 3中选择一起形成C 2〜C 6亚烷基; R 4为烷基，其包括1至6个碳原子和worin R 2和R 4是不同的烷基。 因此，在一些方法描述用于制备第4族含金属前体以及使用该含第4族金属的前体沉积的薄膜的方法。