公开(公告)号：EP1192682B1

公开(公告)日：2006-11-22

申请号：EP00939810.8

申请日：2000-06-12

申请人： CTS Corporation

发明人： BLAIR, Raymond, G. ,  ROMBACH, Edward, J. ,  SIMONS, Randal, N. ,  PASCO, Wayne, D.

IPC分类号： H01P11/00

CPC分类号： H01P11/007 ,  H01P1/2056 ,  H05K1/092 ,  H05K3/027 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165

摘要： A method of forming metallization patterns on a block of dielectric material wherein the entire surface area of the dielectric block is encased with a conductive material and unwanted conductive metal is ablatively etched from a designated surface area of the dielectric block to form desired metallized circuit patterns. The invention also comprises a filter and a duplexer formed by the method of the present invention.

公开(公告)号：EP1192682A1

公开(公告)日：2002-04-03

申请号：EP00939810.8

申请日：2000-06-12

申请人： CTS Corporation

发明人： BLAIR, Raymond, G. ,  ROMBACH, Edward, J. ,  SIMONS, Randal, N. ,  PASCO, Wayne, D.

IPC分类号： H01P11/00

CPC分类号： H01P11/007 ,  H01P1/2056 ,  H05K1/092 ,  H05K3/027 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165

摘要： A method of forming metallization patterns on a block of dielectric material wherein the entire surface area of the dielectric block is encased with a conductive material and unwanted conductive metal is ablatively etched from a designated surface area of the dielectric block to form desired metallized circuit patterns. The invention also comprises a filter and a duplexer formed by the method of the present invention.