公开(公告)号：EP1969620A2

公开(公告)日：2008-09-17

申请号：EP06845229.1

申请日：2006-12-12

申请人： Corning Incorporated

发明人： CITES, Jeffrey S ,  DARCANGELO, Charles M. ,  GREGORSKI, Steven J. ,  MASCHMEYER, Richard, O. ,  STOCKER, Mark A. ,  THOMAS, John C.

IPC分类号： H01L21/321 ,  H01L21/66

CPC分类号： B24B49/12 ,  B24B37/013 ,  H01L21/30625 ,  H01L22/26

摘要： A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.

公开(公告)号：EP2020022A2

公开(公告)日：2009-02-04

申请号：EP07755456.6

申请日：2007-04-16

申请人： Corning Incorporated

发明人： FENG, Jiangwei ,  GADKAREE, Kishor P. ,  MACH, Joseph F. ,  MOORE, Michael J. ,  STOCKER, Mark A.

IPC分类号： H01L21/425

CPC分类号： H01L21/76254 ,  H01L21/30604 ,  H01L21/30608

摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.

公开(公告)号：EP2186126A1

公开(公告)日：2010-05-19

申请号：EP08795616.5

申请日：2008-08-27

申请人： Corning Incorporated

发明人： GADKAREE, Kishor P. ,  STOCKER, Mark A.

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Methods and apparatus for re-using a semiconductor donor wafer in a semiconductor-on-insulator (SOI) fabrication process provide for: (a) subjecting a first implantation surface of a donor semiconductor wafer to an ion implantation process to create a first exfoliation layer of the donor semiconductor wafer; (b) bonding the first implantation surface of the first exfoliation layer to a first insulator substrate; (c) separating the first exfoliation layer from the donor semiconductor wafer, thereby exposing a first cleaved surface of the donor semiconductor wafer, the first cleaved surface having a first damage thickness; and (d) subjecting the first cleaved surface of the donor semiconductor wafer to one or more elevated temperatures over time to reduce the first damage thickness to a sufficient level to produce a second implantation surface.