公开(公告)号：EP2507821A2

公开(公告)日：2012-10-10

申请号：EP10787631.0

申请日：2010-11-29

申请人： Corning Incorporated

发明人： BANKAITIS, Jonas ,  MOORE, Michael J. ,  STONE, Jeffery S. ,  WILLIAMSON, Paul J. ,  ZHANG, Chunhe

IPC分类号： H01L21/304

CPC分类号： H01L21/304 ,  H01L21/02021 ,  H01L21/02032 ,  H01L21/30625

摘要： Methods and apparatus for processing edge portions of a donor semiconductor wafer include controlling chemical mechanical polishing parameters to achieve chamfering of the edges of the donor semiconductor wafer; and alternatively or additionally flexing the donor semiconductor wafer to present a concave configuration, where edge portions thereof are pronounced as compared to a central surface area thereof, such that the pronounced edge portions of the donor semiconductor wafer are preferentially polished against a polishing surface in order to achieve the chamfering.

公开(公告)号：EP2392024A2

公开(公告)日：2011-12-07

申请号：EP10704254.1

申请日：2010-01-29

申请人： Corning Incorporated

发明人： CHANG, Chester H ,  MOORE, Michael J. ,  NISHIMOTO, Michael Y ,  ZHANG, Chunhe

IPC分类号： H01L21/00 ,  H01L21/683 ,  B28D5/00 ,  B23K26/14

CPC分类号： H01L21/78 ,  B28D5/0047 ,  B28D5/0052 ,  B33Y80/00 ,  H01L21/67017 ,  H01L21/67092 ,  H01L21/6838 ,  Y10T83/0591 ,  Y10T83/364

摘要： Methods and apparatus provide for delivering a controlled supply of gas to at least one aero-mechanical device to impart a gas flow to suspend a material sheet; preventing lateral movement of the material sheet in at least one direction when suspended; and imparting a stream of water, from a side of the material sheet opposite the at least one aero-mechanical device, to dice the material sheet when suspended.

摘要翻译： 方法和装置提供将受控的气体供给到至少一个航空机械装置以赋予气流以悬浮材料片材; 防止材料片在悬挂时在至少一个方向上的横向移动; 并且从与所述至少一个航空机械装置相对的所述材料片的一侧施加水流，以在悬挂时切割所述材料片。

公开(公告)号：EP2020022A2

公开(公告)日：2009-02-04

申请号：EP07755456.6

申请日：2007-04-16

申请人： Corning Incorporated

发明人： FENG, Jiangwei ,  GADKAREE, Kishor P. ,  MACH, Joseph F. ,  MOORE, Michael J. ,  STOCKER, Mark A.

IPC分类号： H01L21/425

CPC分类号： H01L21/76254 ,  H01L21/30604 ,  H01L21/30608

摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.

公开(公告)号：EP2359400A2

公开(公告)日：2011-08-24

申请号：EP09744304.8

申请日：2009-10-29

申请人： Corning Incorporated

发明人： CHEREKDJIAN, Sarko ,  CITES, Jeffrey S ,  COUILLARD, James G ,  MASCHMEYER, Richard O ,  MOORE, Michael J. ,  USENKO, Alex

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.