公开(公告)号：EP4163046A1

公开(公告)日：2023-04-12

申请号：EP22199538.4

申请日：2022-10-04

申请人： DENSO CORPORATION ,  National University Corporation Saitama University

发明人： SOLTANI, Bahman ,  YASUDA, Koichiro ,  TAKAGI, Ryota ,  KAWAZU, Tomoki ,  SOBAJIMA, Shunsuke ,  ISSHIKI, Yutaro ,  NOMURA, Sodai ,  SHIRAI, Hideaki ,  YAMADA, Yohei ,  IKENO, Junichi

IPC分类号： B23K26/073 ,  B23K26/082 ,  B23K26/38 ,  B23K26/53 ,  B23K101/40 ,  B23K103/00

摘要： A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections (31) at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold (Eth). The energy density satisfies at least one of conditions of a peak value (Ep) of the energy density is lower than or equal to 44 J/cm 2 , a rising rate (α) of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm 3 , and a range of depth (W) where the energy density exceeds the reforming threshold is smaller than or equal to 30 µm.

公开(公告)号：EP4144497A1

公开(公告)日：2023-03-08

申请号：EP22193420.1

申请日：2022-09-01

申请人： DENSO CORPORATION

发明人： NOMURA, Sodai ,  KAWAZU, Tomoki ,  SOLTANI, Bahman ,  ISSHIKI, Yutaro ,  NUNOME, Nobuyuki ,  OKITA, Shiro ,  ONISHI, Riku

IPC分类号： B28D5/00

摘要： A manufacturing method of semiconductor wafers includes preparing a ingot (20) having a first major surface (21) and a second major surface (22) in a back side of the first major surface, a peeling layer (23) being formed in the ingot along the first major surface; and applying a load to the ingot from outside thereof with respect to a surface direction along the first major surface such that a moment with a supporting point (PP) which is a first end of the ingot in the surface direction acts on the ingot, thereby peeling a wafer precursor (24) from the ingot. Also, a dynamic force may be applied to the ingot such that a tensile stress along an ingot thickness direction acts on an entire area of the ingot in the surface direction, thereby peeling the wafer precursor (24) from the ingot.