公开(公告)号：EP4163046A1

公开(公告)日：2023-04-12

申请号：EP22199538.4

申请日：2022-10-04

申请人： DENSO CORPORATION ,  National University Corporation Saitama University

发明人： SOLTANI, Bahman ,  YASUDA, Koichiro ,  TAKAGI, Ryota ,  KAWAZU, Tomoki ,  SOBAJIMA, Shunsuke ,  ISSHIKI, Yutaro ,  NOMURA, Sodai ,  SHIRAI, Hideaki ,  YAMADA, Yohei ,  IKENO, Junichi

IPC分类号： B23K26/073 ,  B23K26/082 ,  B23K26/38 ,  B23K26/53 ,  B23K101/40 ,  B23K103/00

摘要： A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections (31) at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold (Eth). The energy density satisfies at least one of conditions of a peak value (Ep) of the energy density is lower than or equal to 44 J/cm 2 , a rising rate (α) of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm 3 , and a range of depth (W) where the energy density exceeds the reforming threshold is smaller than or equal to 30 µm.

公开(公告)号：EP4447093A1

公开(公告)日：2024-10-16

申请号：EP22903949.0

申请日：2022-11-08

申请人： DENSO CORPORATION

发明人： YASUDA, Koichiro ,  TAKAGI, Ryota ,  KAWAZU, Tomoki ,  NOMURA, Sodai ,  SHIRAI, Hideaki ,  SOLTANI, Bahman ,  SOBAJIMA, Shunsuke

IPC分类号： H01L21/304 ,  B23K26/53

摘要： A wafer manufacturing method for obtaining a wafer from an ingot (2) includes the following procedure, steps or processes. A surface (21) of one end side of the ingot in a height direction thereof is irradiated with a laser beam to which the ingot has transparency, thereby forming a peeling layer (25) at a depth position corresponding to a thickness of the wafer from the surface. At this moment, the laser beam is irradiated such that a frequency of irradiation in a facet region (RF) is higher than that in a non-facet region (RN). A wafer precursor (26) as a portion between the surface of the ingot and the peeling layer is peeled from the ingot at the peeling layer. A major surface of a peeling body having a plate like shape, the peeling body being obtained by the wafer peeling step, is planarized electrically, chemically and mechanically, thereby obtaining a wafer.