公开(公告)号：EP1669767A1

公开(公告)日：2006-06-14

申请号：EP05257413.4

申请日：2005-12-01

申请人： GENERAL ELECTRIC COMPANY

发明人： Premerlani, William James ,  Liu, Yan ,  Lavoie, Gregory Paul ,  Pintar, Michael Gerard ,  Zhou, Rui ,  Papallo, Thomas Frederick Jr. ,  Valdes, Marcelo Esteban

IPC分类号： G01R31/08 ,  H02H7/26 ,  H02J13/00

CPC分类号： G01R31/086 ,  Y04S10/522

摘要： A method (144) for locating a ground fault in an electrical power distribution system (12) includes providing a plurality of current sensors (14, 16, 17, 18, 20, 22) at a plurality of locations in the electrical power distribution system (12). The method (144) further includes detecting a ground fault in the electrical power distribution system (12). Current is monitored at a plurality of locations in the electrical power distribution system (12) via the current sensors (14, 16, 17, 18, 20, 22) and a test signal is introduced into the electrical power distribution system (12) via a test signal generating device (44). The plurality of locations are monitored (62) to locate the ground fault between a location at which the test signal is detected and a downstream location at which the test signal is not detected.

摘要翻译： 一种用于在电力分配系统（12）中定位接地故障的方法（144）包括在电力分配系统（12）中的多个位置处提供多个电流传感器（14,16,17,18,20,22） （12）。 方法（144）还包括检测配电系统（12）中的接地故障。 经由电流传感器（14,16,17,18,20,22）在电力分配系统（12）中的多个位置处监测电流，并且测试信号通过电力分配系统（12）经由 一个测试信号产生装置（44）。 多个位置被监视（62），以在检测到测试信号的位置与未检测到测试信号的下游位置之间定位接地故障。

公开(公告)号：EP2819156A2

公开(公告)日：2014-12-31

申请号：EP14174706.3

申请日：2014-06-27

申请人： General Electric Company

发明人： Kashyap, Avinash Srikrishnan ,  Sandvik, Peter Micah ,  Zhou, Rui

IPC分类号： H01L21/8252 ,  H01L27/02 ,  H01L27/06 ,  H01L21/82

CPC分类号： H01L27/0248 ,  H01L21/8213 ,  H01L21/8232 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0617 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7786

摘要： A monolithically integrated semiconductor assembly (100) is presented. The semiconductor assembly includes a substrate (110) including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device (120) is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure (130) fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

摘要翻译： 提出了一种单片集成半导体组件（100）。 半导体组件包括在基板上制造包括碳化硅（SiC）和氮化镓（GaN）半导体器件（120）的衬底（110）。 半导体组件还包括在衬底中或衬底上制造的至少一个瞬态电压抑制器（TVS）结构（130），其中TVS结构与GaN半导体器件电接触。 当跨越GaN半导体器件的施加电压大于阈值电压时，TVS结构被配置为以穿通模式，雪崩模式或其组合工作。 还提出了制造单片集成半导体组件的方法。

公开(公告)号：EP2819156B1

公开(公告)日：2019-05-22

申请号：EP14174706.3

申请日：2014-06-27

申请人： General Electric Company

发明人： Kashyap, Avinash Srikrishnan ,  Sandvik, Peter Micah ,  Zhou, Rui

IPC分类号： H01L21/8252 ,  H01L27/02 ,  H01L27/06 ,  H01L21/8232 ,  H01L29/778 ,  H01L29/20 ,  H01L21/82

公开(公告)号：EP2819156A3

公开(公告)日：2015-05-20

申请号：EP14174706.3

申请日：2014-06-27

申请人： General Electric Company

发明人： Kashyap, Avinash Srikrishnan ,  Sandvik, Peter Micah ,  Zhou, Rui

IPC分类号： H01L21/8252 ,  H01L27/02 ,  H01L27/06 ,  H01L21/82

CPC分类号： H01L27/0248 ,  H01L21/8213 ,  H01L21/8232 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0617 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/7786

摘要： A monolithically integrated semiconductor assembly (100) is presented. The semiconductor assembly includes a substrate (110) including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device (120) is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure (130) fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

公开(公告)号：EP1906353A1

公开(公告)日：2008-04-02

申请号：EP07116283.8

申请日：2007-09-13

申请人： General Electric Company

发明人： Morjaria, Mahesh Amritlal ,  Zhou, Rui ,  Joshi, Amit Chandrakant 302 Sraddha Vista 1st Cross Rustum Bagh Layout ,  Sarkar, Abhinanda ,  Gujjar, Vineel Chandrakanth No.33, 1 B Main Road NR Layout, B/H

IPC分类号： G06Q50/00

CPC分类号： F03D7/048 ,  F03D7/0284 ,  F05B2240/40 ,  F05B2260/8211 ,  F05B2270/335 ,  G06Q50/06 ,  Y02A30/12 ,  Y02E10/723 ,  Y04S10/54

摘要： A method of operating a wind farm (102) that includes a plurality of wind turbine generators (WTGs) (103) includes generating wind turbine generator (WTG) availability data (210) for each WTG. The method also includes generating wide-area meteorological data (126) for a first geographical region. The method further includes generating narrow-area meteorological forecast data for a second geographical region by transmitting at least a portion of the wide-area meteorological data to at least one resident narrow-area meteorological forecast algorithm. The first geographical region includes at least a portion of the second geographical region. The method also includes generating electric power production forecast data by using at least one resident electric power production forecast algorithm to manipulate the WTG availability data and the narrow-area meteorological forecast data.

摘要翻译： 一种操作包括多个风力涡轮发电机（WTG）的风力发电场（102）的方法包括为每个WTG生成风力涡轮发电机（WTG）可用性数据（210）。 该方法还包括为第一地理区域生成广域气象数据（126）。 该方法还包括通过将广域气象数据的至少一部分传送到至少一个常驻狭窄区域气象预测算法来生成第二地理区域的窄区域气象预报数据。 第一地理区域包括第二地理区域的至少一部分。 该方法还包括通过使用至少一个驻留电力生产预测算法来产生电力生产预测数据来操纵WTG可用性数据和窄区域气象预报数据。