公开(公告)号：EP2742506A1

公开(公告)日：2014-06-18

申请号：EP12823364.0

申请日：2012-08-13

申请人： GSI Technology Inc.

发明人： HAIG, Robert ,  CHUANG, Patrick ,  TSENG, Chih ,  HUANG, Mu-hsiang

IPC分类号： G11C11/409

CPC分类号： G11C11/40615 ,  G06F13/1615 ,  G11C7/1039 ,  G11C7/1072 ,  G11C11/419 ,  G11C2207/2281 ,  G11C2207/229

摘要： Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.

公开(公告)号：EP2742506B1

公开(公告)日：2018-10-17

申请号：EP12823364.0

申请日：2012-08-13

申请人： GSI Technology Inc.

发明人： HAIG, Robert ,  CHUANG, Patrick ,  TSENG, Chih ,  HUANG, Mu-hsiang

IPC分类号： G06F13/16 ,  G11C7/10 ,  G11C11/419

CPC分类号： G11C11/40615 ,  G06F13/1615 ,  G11C7/1039 ,  G11C7/1072 ,  G11C11/419 ,  G11C2207/2281 ,  G11C2207/229

摘要： Systems and methods are disclosed for increasing the performance of static random access memory (SRAM). Various systems herein, for example, may include or involve dual- or multi-pipe, multi-bank SRAMs, such as Quad-B2 SRAMs. In one illustrative implementation, there is provided an SRAM memory device including a memory array comprising a plurality of SRAM banks and pairs of separate and distinct pipes associated with each of the SRAM banks, wherein each pair of pipes may provide independent access to its associated SRAM bank.