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公开(公告)号：EP0316860A3
公开(公告)日：1990-04-04
申请号：EP88119012.8
申请日：1988-11-15
申请人： HONEYWELL INC.
CPC分类号： H01J63/00 , Y10S257/917
摘要： A compact pulsed optical source of near to ultraviolet wavelength energy adapted to be connected to an external power source (55) includes a device (20) for emitting photons, apparatus (30) for transforming photons into photoelectrons, apparatus (40) for multiplying the photoelectrons, a lens (90), a phosphor coated anode (70), circuit apparatus (100) for providing a pulsed electric signal and first (50) and second (60) biasing apparatus. The emitting device (20) impinges photons on the photon transforming apparatus (30) which accelerates electrons to the multiplying apparatus (40) as pulses are received from the circuit apparatus which relates the multiplying apparatus to the transforming apparatus. With each pulse, a cloud of electrons (42) is emitted from the multiplying apparatus (40) and excites the phosphor coated anode (70) thereby causing optical emission.
摘要翻译： 适于连接到外部电源（55）的近紫外波长能量的小型脉冲光源包括用于发射光子的装置（20），用于将光子转换成光电子的装置（30），用于将光子 光电子，透镜（90），荧光体涂覆阳极（70），用于提供脉冲电信号的电路装置（100）和第一（50）和第二（60）偏置装置。 发射装置（20）将光子照射到光子转换装置（30）上，从而将乘法装置与变换装置相关联的电路装置接收到脉冲，从而将电子加速到乘法装置（40）。 对于每个脉冲，从乘法装置（40）发射出电子云（42），激发荧光体涂覆的阳极（70）从而引起光发射。
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公开(公告)号：EP0202637A2
公开(公告)日：1986-11-26
申请号：EP86106758.5
申请日：1986-05-17
申请人： HONEYWELL INC.
发明人： Khan, M. Asif , Schulze, Richard G.
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from 200 to 300nm is based on Al x Ga 1-x N, Negative electron affinity photocathodes for sharply enhanced photoemission yield can be formed by applying a layer of cesium (15) to the surface of Al x Ga 1-x N (14) for which the Fermi energy level is appropriately positioned (Figure 1).
摘要翻译： 基于AlxGa1-xN，具有长波长截止频率的高效紫外响应负电子亲和光电阴极可以在从差分200到差分300nm的波长下调谐。 可以通过在适当定位费米能级的Al x Ga 1-x N的表面上施加铯层来形成用于急剧提高的光电转换产率的负电子亲和光电阴极。
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公开(公告)号：EP0316860A2
公开(公告)日：1989-05-24
申请号：EP88119012.8
申请日：1988-11-15
申请人： HONEYWELL INC.
CPC分类号： H01J63/00 , Y10S257/917
摘要： A compact pulsed optical source of near to ultraviolet wavelength energy adapted to be connected to an external power source (55) includes a device (20) for emitting photons, apparatus (30) for transforming photons into photoelectrons, apparatus (40) for multiplying the photoelectrons, a lens (90), a phosphor coated anode (70), circuit apparatus (100) for providing a pulsed electric signal and first (50) and second (60) biasing apparatus. The emitting device (20) impinges photons on the photon transforming apparatus (30) which accelerates electrons to the multiplying apparatus (40) as pulses are received from the circuit apparatus which relates the multiplying apparatus to the transforming apparatus. With each pulse, a cloud of electrons (42) is emitted from the multiplying apparatus (40) and excites the phosphor coated anode (70) thereby causing optical emission.
摘要翻译： 适于连接到外部电源（55）的近紫外波长能量的小型脉冲光源包括用于发射光子的装置（20），用于将光子转换成光电子的装置（30），用于将光子 光电子，透镜（90），荧光体涂覆阳极（70），用于提供脉冲电信号的电路装置（100）和第一（50）和第二（60）偏置装置。 发射装置（20）将光子照射到光子转换装置（30）上，从而将乘法装置与变换装置相关联的电路装置接收到脉冲，从而将电子加速到乘法装置（40）。 对于每个脉冲，从乘法装置（40）发射出电子云（42），激发荧光体涂覆的阳极（70）从而引起光发射。
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公开(公告)号：EP0177918A2
公开(公告)日：1986-04-16
申请号：EP85112674.8
申请日：1985-10-07
申请人： HONEYWELL INC.
IPC分类号： H01L31/0304 , H01L31/108 , H01L31/18
CPC分类号： H01L31/03046 , H01L31/108 , H01L31/184 , Y02E10/544
摘要： A method of preparing a UV detector of Al x Ga 1-x N. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AIN and then Al x Ga 1-x N on a sapphire substrate. A photodetector structure is fabricated on the AlGaN.
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公开(公告)号：EP0177918B1
公开(公告)日：1991-03-06
申请号：EP85112674.8
申请日：1985-10-07
申请人： HONEYWELL INC.
IPC分类号： H01L31/0304 , H01L31/108 , H01L31/18
CPC分类号： H01L31/03046 , H01L31/108 , H01L31/184 , Y02E10/544
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公开(公告)号：EP0177918A3
公开(公告)日：1987-09-16
申请号：EP85112674
申请日：1985-10-07
申请人： HONEYWELL INC.
CPC分类号： H01L31/03046 , H01L31/108 , H01L31/184 , Y02E10/544
摘要： A method of preparing a UV detector of Al x Ga 1-x N. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AIN and then Al x Ga 1-x N on a sapphire substrate. A photodetector structure is fabricated on the AlGaN.
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公开(公告)号：EP0202637A3
公开(公告)日：1987-01-21
申请号：EP86106758
申请日：1986-05-17
申请人： HONEYWELL INC.
发明人： Khan, M. Asif , Schulze, Richard G.
CPC分类号： H01J1/34 , H01J2201/3423
摘要： A high efficiency UV responsive negative electron affinity photocathode with the long wavelength cutoff tunable over the wavelength from 200 to 300nm is based on Al x Ga 1-x N, Negative electron affinity photocathodes for sharply enhanced photoemission yield can be formed by applying a layer of cesium (15) to the surface of Al x Ga 1-x N (14) for which the Fermi energy level is appropriately positioned (Figure 1).
摘要翻译： 基于AlxGa1-xN，具有长波长截止频率的高效紫外响应负电子亲和光电阴极可以在从差分200到差分300nm的波长下调谐。 可以通过在适当定位费米能级的Al x Ga 1-x N的表面上施加铯层来形成用于急剧提高的光电转换产率的负电子亲和光电阴极。
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