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1.发明公开PROCEDE DE REALISATION D'UN SEMICONDUCTEUR A LARGE BANDE INTERDITE DOPE POSITIVEMENT 审中-公开作出了积极的掺杂半导体宽禁带
公开(公告)号：EP1342261A1
公开(公告)日：2003-09-10
申请号：EP01999968.9
申请日：2001-12-05
IPC分类号： H01L21/363 , H01L31/18
摘要： The invention concerns a method for producing a positively doped semiconductor with large forbidden band, which consists in growing the semiconductor in the presence of an element capable of acting as surfactant at the growth surface and of inhibiting the formation of gaps; doping the semiconductor with an appropriate positive doping agent. Preferably, ZnO is used as semiconductor. The invention is useful for producing positively doped ZnO.
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公开(公告)号：EP1342261B1
公开(公告)日：2020-03-04
申请号：EP01999968.9
申请日：2001-12-05
IPC分类号： H01L21/363 , H01L31/0296 , H01L31/18
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