公开(公告)号：EP4418309A1

公开(公告)日：2024-08-21

申请号：EP22881047.9

申请日：2022-10-12

申请人： Idemitsu Kosan Co., Ltd.

发明人： YAMAGUCHI, Koji ,  TSURUMA, Yuki ,  KAWASHIMA, Emi ,  INOUE, Kazuyoshi

IPC分类号： H01L21/363 ,  C23C14/08 ,  H01L21/20 ,  H01L21/336 ,  H01L21/66 ,  H01L29/786

CPC分类号： H01L21/02107 ,  H01L21/20 ,  H01L22/00 ,  H01L29/66477 ,  H01L29/786 ,  C23C14/08

摘要： Provided is a crystalline oxide thin film including In as a main component, wherein 50% or more of Fourier transform images obtained by subjecting each of lattice images in a plurality of image regions extracted from a transmission electron microscope (TEM) image of a cross-section of the crystalline oxide thin film to two-dimensional Fourier transform (FFT) processing exhibit any one of plane orientations selected from (100), (110), (111), (211), (411), (125), (210), (310), and (320).

公开(公告)号：EP4266375A1

公开(公告)日：2023-10-25

申请号：EP21910762.0

申请日：2021-12-21

申请人： Idemitsu Kosan Co., Ltd

发明人： MIYAGAWA, Yoshihide ,  FUKASAWA, Kazuhito ,  HAMANO, Mikio ,  HORIGUCHI, Kyohei ,  YAMAGUCHI, Koji

IPC分类号： H01L31/0224 ,  H01L31/0749

摘要： An electrode structure of a solar cell includes an electric conductor on a substrate side of a chalcogen solar cell, and a wiring element to be electrically connected with the electric conductor. The wiring element is stacked on and bonded with the electric conductor. The melting point of the wiring element is equal to or higher than 230°C, and the electric conductor in the region corresponding to the wiring element includes a part of the metal element of the wiring element.

公开(公告)号：EP4418330A1

公开(公告)日：2024-08-21

申请号：EP22881043.8

申请日：2022-10-12

申请人： Idemitsu Kosan Co.,Ltd.

发明人： KAWASHIMA, Emi ,  TSURUMA, Yuki ,  SASAKI, Daichi ,  YAMAGUCHI, Koji ,  IWASE, Nobuhiro

IPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L21/28 ,  H01L21/336 ,  H01L21/363 ,  H01L21/66 ,  H01L29/417

CPC分类号： G02F1/1368 ,  H01L21/02107 ,  H01L21/28 ,  H01L22/00 ,  H01L29/417 ,  H01L29/66477 ,  H01L29/786

摘要： A crystalline oxide thin film including In as a main component, wherein the crystalline oxide thin film includes a low-resistance region A and a high-resistance region B that have different spread resistance values measured with a scanning spread resistance microscope (SSRM) in a plane direction thereof, and the spread resistance value of the high-resistance region B is 8 times or more as large as the spread resistance value of the low-resistance region A.