公开(公告)号：EP1617477A1

公开(公告)日：2006-01-18

申请号：EP04719623.3

申请日：2004-03-11

申请人： Juridical Foundation Osaka Industrial Promotion Organization

发明人： AKINO, Toshiro, c/o Kinki University

IPC分类号： H01L27/092 ,  H01L27/06 ,  H01L29/786

CPC分类号： H01L27/0705 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/1087 ,  H03K2217/0018

摘要： A lateral bipolar CMOS integrated circuit having an inverter circuit including an n-channel MOS transistor and a p-channel MOS transistor, and having four terminals of: a gate input terminal Vin connected with the gates of the n-channel MOS transistor and the p-channel MOS transistor; an output terminal Vout connected with the drains of the n-channel MOS transistor and the p-channel MOS transistor; a p-type base terminal connected with a p-type substrate of the n-channel MOS transistor; and an n-type base terminal connected with an n-type substrate of the p-channel MOS transistor. The n-channel MOS transistor operates in a hybrid mode which is the hybrid of an operation mode of the MOS transistor and that of an npn lateral bipolar transistor which is inherent in the n-channel MOS transistor. The p-channel MOS transistor operates in a hybrid mode which is the hybrid of an operation mode of the MOS transistor and that of a pnp lateral bipolar transistor which is inherent in the p-channel MOS transistor.

摘要翻译： 一种横向双极CMOS集成电路，具有包括n沟道MOS晶体管和p沟道MOS晶体管的逆变器电路，并且具有四个端子：与n沟道MOS晶体管的栅极连接的栅极输入端子Vin和p 通道MOS晶体管; 与n沟道MOS晶体管和p沟道MOS晶体管的漏极连接的输出端子Vout; 与n沟道MOS晶体管的p型衬底连接的p型基极; 以及与p沟道MOS晶体管的n型衬底连接的n型基极。 n沟道MOS晶体管以混合模式工作，该混合模式是MOS晶体管的工作模式与n沟道MOS晶体管固有的npn横向双极晶体管的工作模式的混合。 p沟道MOS晶体管以混合模式工作，该混合模式是MOS晶体管的工作模式和p沟道MOS晶体管固有的pnp横向双极晶体管的工作模式。