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    A method of metallization for a nitride ceramic member
    6.
    发明公开
    A method of metallization for a nitride ceramic member 失效
    Verfahren zur Metallisierung eines nitrid-keramischen Gegenstandes。

    公开(公告)号：EP0282285A2

    公开(公告)日：1988-09-14

    申请号：EP88302049.7

    申请日：1988-03-09

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Takeda, Hiromitsu c/o Patent Division ,  Nakahashi, Masako c/o Patent Division ,  Shirokane, Makoto c/o Patent Division ,  Yamazaki, Tatsuo c/o Patent Division

    IPC分类号： C04B41/88 ,  C04B41/87

    CPC分类号： C04B41/009 ,  C04B41/5062 ,  C04B41/5127 ,  C04B41/5144 ,  C04B41/52 ,  C04B41/87 ,  C04B41/88 ,  C04B41/89 ,  H01L21/4846 ,  H05K1/0306 ,  H05K3/146 ,  H05K3/388 ,  C04B41/4515 ,  C04B41/4572 ,  C04B41/51 ,  C04B41/5111 ,  C04B35/58

    摘要： A nitride ceramic member (14) is maintained at a vacuum of 1 x 10⁻⁴ Torr or less at a temperature of 1,100°C or more, and a metal vapor is brought into contact with the surface of the nitride ceramic member. A nitride is reacted with the metal in the surface portion of the ceramic member (14), and a metallized layer is formed on the surface of the member. If AℓN is used as a nitride ceramic material (14), the AℓN member is maintained at the vacuum at the high temperature and a Ti vapor is brought into contact with the surface of the AℓN member to form a TiN coating layer on the surface of the AℓN member. A BN or graphite mask is formed on the surface of the nitride ceramic member and the above method is practiced to selectively form a metallized layer on the non-masked member surface. By selectively forming a metallized layer by using AℓN, a highly thermal-conductivity substrate (20) having a conductive layer (22) formed on the AℓN base can be prepared.

    摘要翻译： 氮化物陶瓷构件（14）在1100℃或更高的温度下保持在1×10 -4乇或更小的真空，并使金属蒸气与氮化物陶瓷的表面接触 会员。 氮化物与陶瓷构件（14）的表面部分中的金属反应，并且在构件的表面上形成金属化层。 如果使用Al N作为氮化物陶瓷材料（14），则将Al N成员在高温下保持在真空状态，并使Ti蒸气与AlN成员的表面接触以形成TiN 涂层表面上的Al N成员。 在氮化物陶瓷构件的表面上形成BN或石墨掩模，并且实施上述方法以在非掩模构件表面上选择性地形成金属化层。 通过使用A l N选择性地形成金属化层，可以制备在A11N基上形成有导电层（22）的高导热性衬底（20）。