公开(公告)号：EP2958153B1

公开(公告)日：2019-08-07

申请号：EP15001779.6

申请日：2015-06-16

申请人： LG Electronics Inc.

发明人： Lee, Kyoungsoo ,  Choi, Minho ,  Lee, Jinhyung ,  Kwag, Gyeayoung ,  Park, Sangwook

IPC分类号： H01L31/18 ,  H01L21/67 ,  H01L21/677 ,  H05B3/00

公开(公告)号：EP2713403A3

公开(公告)日：2014-10-29

申请号：EP13004584.2

申请日：2013-09-19

申请人： LG Electronics, Inc.

发明人： Lee, Hyunho ,  Lee, Kyoungsoo ,  Park, Changseo

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/068

CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/03682 ,  H01L31/068 ,  Y02E10/546 ,  Y02E10/547

摘要： A solar cell is discussed. The solar cell includes a semiconductor substrate, a p-type conductive region formed at the semiconductor substrate and including a p-type impurity, and a passivation film formed on the p-type conductive region and including aluminum oxide. The passivation film has a thickness of 7 to 17 Å, or the passivation film comprises aluminum oxide having a chemical formula AlO 1.5+X , where 0

公开(公告)号：EP2608280A2

公开(公告)日：2013-06-26

申请号：EP12004627.1

申请日：2012-06-20

申请人： LG ELECTRONICS INC.

发明人： Lee, Kyoungsoo ,  Lee, Seongeun

IPC分类号： H01L31/18

CPC分类号： H01L31/0684 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for manufacturing a solar cell where the solar cell includes a dopant layer having a first portion of a first resistance and a second portion of a second resistance lower than the first resistance, the method includes ion-implanting a dopant into the semiconductor substrate to form the dopant layer; firstly activating by heating the second portion and activating the dopant at the second portion; and secondly activating by heating the first portion and the second portion and activating the dopant at the first portion and the second portion.

摘要翻译： 在用于制造太阳能电池，其中所述太阳能电池包括：具有第一电阻的第一部分和一个第二电阻高于第一电阻低的第二部分的掺杂剂层的方法，该方法包括离子注入的掺杂剂至该半导体衬底 以形成掺杂剂层; 通过加热所述第二部分并激活在第二部分中的掺杂剂活化首先; 其次，通过加热所述第一部分和所述第二部分并激活在所述第一部分中的掺杂剂和所述第二部分激活。

公开(公告)号：EP2605290A1

公开(公告)日：2013-06-19

申请号：EP12004625.5

申请日：2012-06-20

申请人： LG Electronics Inc.

发明人： Lee, Kyoungsoo ,  Shin, Myungjun ,  Jeong, Jiweon

IPC分类号： H01L31/0236

CPC分类号： H01L31/02366 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A method for manufacturing asolar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.

摘要翻译： 一种用于制造无极单元的方法，包括：通过使用干法蚀刻方法来纹理化具有第一导电类型掺杂剂的半导体衬底的前表面;通过将第二导电类型掺杂剂离子注入到半导体衬底的前表面中来形成发射极层; 在半导体衬底的背面上形成背面钝化膜; 以及形成电连接到发射极层的第一电极和与半导体衬底的背表面部分接触的第二电极。

公开(公告)号：EP2602835A2

公开(公告)日：2013-06-12

申请号：EP12004628.9

申请日：2012-06-20

申请人： LG ELECTRONICS INC.

发明人： Lee, Kyoungsoo ,  Lee, Seongeun

IPC分类号： H01L31/068 ,  H01L31/18

CPC分类号： H01L31/0376 ,  H01L25/042 ,  H01L27/142 ,  H01L31/022425 ,  H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductive type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductive type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductive type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductive type dopant.

摘要翻译： 根据本发明实施例的太阳能电池的制造方法包括：制备具有第一导电型掺杂剂的半导体衬底; 将前非晶化元素离子注入到半导体衬底的前表面中以形成非晶层; 以及通过将第二导电型掺杂剂离子注入到半导体衬底的前表面中形成发射极层。 该方法然后还包括热处理层以激活第二导电型掺杂剂。 该方法还包括通过离子注入第一导电型掺杂剂在半导体衬底的背面形成背表面场层。

公开(公告)号：EP2395553B1

公开(公告)日：2018-10-10

申请号：EP10015635.5

申请日：2010-12-14

申请人： LG ELECTRONICS INC.

发明人： Lee, Giwon ,  Kim, Jonghwan ,  Kang, Juwan ,  Lee, Kyoungsoo ,  Ha, Manhyo ,  Jang, Daehee

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/068

CPC分类号： H01L31/022433 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A solar cell includes a substrate having a textured surface, the textured surface including a plurality of jagged portions; an emitter region forming a p-n junction with the substrate; a plurality of first electrodes connected to the emitter region; and a second electrode connected to the substrate, wherein each of the plurality of jagged portions has a diameter and a height that are equal to or less than 1 µ m, and each of the plurality of first electrodes has a width of about 20 µ m to about 80 µ m.

公开(公告)号：EP3288088A1

公开(公告)日：2018-02-28

申请号：EP17196523.9

申请日：2012-06-20

申请人： LG Electronics Inc.

发明人： Lee, Kyoungsoo ,  Lee, Seongeun

IPC分类号： H01L31/068 ,  H01L31/18

CPC分类号： H01L31/0376 ,  H01L25/042 ,  H01L27/142 ,  H01L31/022425 ,  H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A method for manufacturing a solar cell according to an embodiment of the present invention includes preparing a semiconductor substrate having a first conductive type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductive type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductive type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductive type dopant.

摘要翻译： 根据本发明实施例的制造太阳能电池的方法包括：制备具有第一导电类型掺杂剂的半导体衬底; 将预非晶化元素离子注入到半导体衬底的前表面中以形成非晶层; 以及通过将第二导电类型掺杂剂离子注入到半导体衬底的前表面中来形成发射极层。 该方法然后进一步包括热处理这些层以激活第二导电类型掺杂剂。 该方法还包括通过离子注入第一导电类型掺杂剂在半导体衬底的背表面处形成背表面场层。

公开(公告)号：EP2713403B1

公开(公告)日：2016-11-02

申请号：EP13004584.2

申请日：2013-09-19

申请人： LG Electronics, Inc.

发明人： Lee, Hyunho ,  Lee, Kyoungsoo ,  Park, Changseo

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/068

CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/03682 ,  H01L31/068 ,  Y02E10/546 ,  Y02E10/547

公开(公告)号：EP2395553A3

公开(公告)日：2016-06-22

申请号：EP10015635.5

申请日：2010-12-14

申请人： LG ELECTRONICS INC.

发明人： Lee, Giwon ,  Kim, Jonghwan ,  Kang, Juwan ,  Lee, Kyoungsoo ,  Ha, Manhyo ,  Jang, Daehee

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/068

CPC分类号： H01L31/022433 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

摘要： A solar cell includes a substrate having a textured surface, the textured surface including a plurality of jagged portions; an emitter region forming a p-n junction with the substrate; a plurality of first electrodes connected to the emitter region; and a second electrode connected to the substrate, wherein each of the plurality of jagged portions has a diameter and a height that are equal to or less than 1 µ m, and each of the plurality of first electrodes has a width of about 20 µ m to about 80 µ m.

公开(公告)号：EP2608280A3

公开(公告)日：2013-11-20

申请号：EP12004627.1

申请日：2012-06-20

申请人： LG ELECTRONICS INC.

发明人： Lee, Kyoungsoo ,  Lee, Seongeun

IPC分类号： H01L31/18

CPC分类号： H01L31/0684 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for manufacturing a solar cell where the solar cell includes a dopant layer having a first portion of a first resistance and a second portion of a second resistance lower than the first resistance, the method includes ion-implanting a dopant into the semiconductor substrate to form the dopant layer; firstly activating by heating the second portion and activating the dopant at the second portion; and secondly activating by heating the first portion and the second portion and activating the dopant at the first portion and the second portion.

摘要翻译： 在用于制造太阳能电池，其中所述太阳能电池包括：具有第一电阻的第一部分和一个第二电阻高于第一电阻低的第二部分的掺杂剂层的方法，该方法包括离子注入的掺杂剂至该半导体衬底 以形成掺杂剂层; 通过加热所述第二部分并激活在第二部分中的掺杂剂活化首先; 其次，通过加热所述第一部分和所述第二部分并激活在所述第一部分中的掺杂剂和所述第二部分激活。