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1.发明公开Oxide single crystal and method of manufacturing thereof 失效Oxid-Einkristall und Verfahren zu seiner Herstellung
公开(公告)号：EP0834605A1
公开(公告)日：1998-04-08
申请号：EP97115850.6
申请日：1997-09-11
摘要： To provide an oxide single crystal of large size having the crystal structure of Ca 3 Ga 2 Ge 4 O 14 and containing Ge as a constituent element and a method of manufacturing thereof.
The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO 2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO 2 in a stoichiometrically excess amount, or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than 2 × 10 -1 atm.摘要翻译： 提供具有Ca 3 Ga 2 Ge 4 O 14的晶体结构并含有Ge作为构成元素的大尺寸的氧化物单晶及其制造方法。 氧化物单晶是通过制造方法得到的，该方法包括以下步骤：在单晶生长气氛中，从原料熔体中制备含有GeO 2的起始材料和生长所述氧化物晶体的步骤，其特征在于所述原料含有GeO 2 或者所述单晶生长气氛是氧分压大于2×10 -1 atm的气体。
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公开(公告)号：EP0834605B1
公开(公告)日：2001-12-12
申请号：EP97115850.6
申请日：1997-09-11
摘要： To provide an oxide single crystal of large size having the crystal structure of Ca3Ga2Ge4O14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO2 in a stoichiometrically excess amount, or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than 2 x 10 atm.
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