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1.发明授权Semiconductive ceramic composition having negative temperature coefficient of resistance 失效具有电阻的负温度系数的半导体陶瓷组合物
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2.发明授权Apparatus for production of single crystal oxide films by liquid-phase epitaxy 失效用于制造由液相外延氧化物单晶膜的装置
公开(公告)号：EP0676492B1
公开(公告)日：1998-07-08
申请号：EP95105134.1
申请日：1995-04-05
发明人： Fujino, Masaru , Takagi, Hiroshi
CPC分类号： C30B19/06 , C30B19/02 , C30B29/28 , Y10T117/10 , Y10T117/1008
摘要： An apparatus for production of single crystal oxide films by liquid-phase epitaxy comprises an insulating core tube with an external high frequency heating means, an electroconductive cylindrical member having openings at both ends and being arranged in the core tube, and a crucible made of an electroconductive material and coaxially arranged in the cylindrical member.
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3.发明公开Oxide single crystal and method of manufacturing thereof 失效Oxid-Einkristall und Verfahren zu seiner Herstellung
公开(公告)号：EP0834605A1
公开(公告)日：1998-04-08
申请号：EP97115850.6
申请日：1997-09-11
摘要： To provide an oxide single crystal of large size having the crystal structure of Ca 3 Ga 2 Ge 4 O 14 and containing Ge as a constituent element and a method of manufacturing thereof.
The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO 2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO 2 in a stoichiometrically excess amount, or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than 2 × 10 -1 atm.摘要翻译： 提供具有Ca 3 Ga 2 Ge 4 O 14的晶体结构并含有Ge作为构成元素的大尺寸的氧化物单晶及其制造方法。 氧化物单晶是通过制造方法得到的，该方法包括以下步骤：在单晶生长气氛中，从原料熔体中制备含有GeO 2的起始材料和生长所述氧化物晶体的步骤，其特征在于所述原料含有GeO 2 或者所述单晶生长气氛是氧分压大于2×10 -1 atm的气体。
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公开(公告)号：EP0501434A3
公开(公告)日：1992-11-25
申请号：EP92103222.3
申请日：1992-02-26
CPC分类号： H03H2/001 , H01F10/245
摘要： A material for magnetostatic wave devices comprising a ferrimagnetic thin film composed of the above material and epitaxially grown on a substrate of Gd₃Ga₂(GaO₄)₃. The material for the ferrimagnetic thin film has a composition expressed by the general formula:
Y 3-x Bi x Fe₅O₁₂
where x is a mole fraction of Bi and takes a value in the following range: 0.01-
5.发明公开
公开(公告)号：EP0501434A2
公开(公告)日：1992-09-02
申请号：EP92103222.3
申请日：1992-02-26
CPC分类号： H03H2/001 , H01F10/245
摘要： A material for magnetostatic wave devices comprising a ferrimagnetic thin film composed of the above material and epitaxially grown on a substrate of Gd₃Ga₂(GaO₄)₃. The material for the ferrimagnetic thin film has a composition expressed by the general formula:
Y 3-x Bi x Fe₅O₁₂
where x is a mole fraction of Bi and takes a value in the following range: 0.01摘要翻译： 一种用于静磁波器件的材料，包括由上述材料构成的并在Gd3Ga2（GaO4）3的衬底上外延生长的亚铁磁性薄膜。 用于亚铁磁性薄膜的材料具有由以下通式表示的组成：Y 3-x BixFe 5 O 12，其中x是Bi的摩尔分数，并且其值在以下范围内：0.01
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公开(公告)号：EP0460629A1
公开(公告)日：1991-12-11
申请号：EP91109175.9
申请日：1991-06-05
CPC分类号： H01M8/2432 , H01M8/1231 , H01M8/2425 , H01M8/2457 , H01M8/2483
摘要： A solid electrolyte (1) having a fuel side (2) electrode and an air side electrode (3) on either side and conductive distributors (5,8) are arranged one upon another so as to form a cell in the shape of a disk. Further, thus made cells are connected via interconnectors (12) so as to form a solid oxide fuel cell of a laminate structure.
摘要翻译： 任一侧和导电分配器（5,8）彼此依次布置，以便形成圆盘形状的单元。 此外，由此使得电池通过互连器（12）连接以形成层压结构的固体氧化物燃料电池。
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公开(公告)号：EP0635855B1
公开(公告)日：1997-03-19
申请号：EP94111255.9
申请日：1994-07-19
CPC分类号： H01F1/346 , C04B35/2641
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公开(公告)号：EP0565064B1
公开(公告)日：1996-11-06
申请号：EP93105711.1
申请日：1993-04-06
发明人： Abe, Yoshio , Takagi, Hiroshi , Sakabe, Yukio
CPC分类号： C04B41/009 , C01G23/006 , C01P2002/34 , C04B41/455 , C04B41/5041 , C04B41/81 , C04B41/87 , C04B2111/00844 , C23C26/02 , H01G4/1227 , C04B41/4535 , C04B41/4554 , C04B35/10
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9.发明公开Apparatus for production of single crystal oxide films by liquid-phase epitaxy 失效Vorrichtung zur Herstellung einkristallinen oxyde Filmen durchFlüssigphase-Epitaxie。
公开(公告)号：EP0676492A1
公开(公告)日：1995-10-11
申请号：EP95105134.1
申请日：1995-04-05
发明人： Fujino, Masaru , Takagi, Hiroshi
CPC分类号： C30B19/06 , C30B19/02 , C30B29/28 , Y10T117/10 , Y10T117/1008
摘要： An apparatus for production of single crystal oxide films by liquid-phase epitaxy comprises an insulating core tube with an external high frequency heating means, an electroconductive cylindrical member having openings at both ends and being arranged in the core tube, and a crucible made of an electroconductive material and coaxially arranged in the cylindrical member.
摘要翻译： 通过液相外延生产单晶氧化膜的装置包括具有外部高频加热装置的绝缘芯管，在两端具有开口并设置在芯管中的导电圆柱形构件，以及由 导电材料并且同轴地布置在圆柱形构件中。
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公开(公告)号：EP0820965B1
公开(公告)日：2003-11-05
申请号：EP97112754.3
申请日：1997-07-24
CPC分类号： C03C14/004 , C03C8/14 , C03C2214/04 , C03C2214/20 , C03C2214/30 , H05K1/0306
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