公开(公告)号：EP0426877A4

公开(公告)日：1993-01-27

申请号：EP90907474

申请日：1990-05-29

申请人： NIPPON MINING COMPANY

发明人： SHIMAKURA, HARUHITO NIPPON MINING CO., LTD ,  ODA, OSAMU NIPPON MINING CO., LTD ,  KAINOSHO, KEIJI NIPPON MINING CO., LTD

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/336 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L21/31

CPC分类号： H01L29/66522 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/28581 ,  H01L21/31666 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S148/119

摘要： A method of producing semiconductor devices wherein a compound semiconductor substrate is contained in a quartz ampoule together with an oxygen gas and elements having higher vapor pressures among those elements constituting the substrate, the ampoule is then sealed and is heated to form an oxide film on the surface of the compound semiconductor substrate, followed by the formation of an electrode metal layer thereon. Thus, there are formed a MOS diode having a small interface level density and a Schottky electrode having a great barrier height and a small ideal factor. Namely, there are obtained a Schottky diode having a good forward current vs. voltage characteristic, a small reverse current and excellent rectifying property and MESFET having small variations in the threshold voltage.

摘要翻译： 一种制造半导体器件的方法，其中化合物半导体衬底与构成衬底的那些元素中的氧气和较高蒸气压的元素一起包含在石英安瓿中，然后将安瓿密封并加热以形成氧化膜 化合物半导体衬底的表面，然后在其上形成电极金属层。 因此，形成了具有小的界面密度的MOS二极管和具有大的势垒高度和小的理想因子的肖特基电极。 即，得到肖特基二极管具有良好的正向电流对电压特性，小的反向电流和优异的整流特性以及阈值电压变化小的MESFET。