公开(公告)号：EP0426877A4

公开(公告)日：1993-01-27

申请号：EP90907474

申请日：1990-05-29

申请人： NIPPON MINING COMPANY

发明人： SHIMAKURA, HARUHITO NIPPON MINING CO., LTD ,  ODA, OSAMU NIPPON MINING CO., LTD ,  KAINOSHO, KEIJI NIPPON MINING CO., LTD

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/336 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L21/31

CPC分类号： H01L29/66522 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/28581 ,  H01L21/31666 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S148/119

摘要： A method of producing semiconductor devices wherein a compound semiconductor substrate is contained in a quartz ampoule together with an oxygen gas and elements having higher vapor pressures among those elements constituting the substrate, the ampoule is then sealed and is heated to form an oxide film on the surface of the compound semiconductor substrate, followed by the formation of an electrode metal layer thereon. Thus, there are formed a MOS diode having a small interface level density and a Schottky electrode having a great barrier height and a small ideal factor. Namely, there are obtained a Schottky diode having a good forward current vs. voltage characteristic, a small reverse current and excellent rectifying property and MESFET having small variations in the threshold voltage.

摘要翻译： 一种制造半导体器件的方法，其中化合物半导体衬底与构成衬底的那些元素中的氧气和较高蒸气压的元素一起包含在石英安瓿中，然后将安瓿密封并加热以形成氧化膜 化合物半导体衬底的表面，然后在其上形成电极金属层。 因此，形成了具有小的界面密度的MOS二极管和具有大的势垒高度和小的理想因子的肖特基电极。 即，得到肖特基二极管具有良好的正向电流对电压特性，小的反向电流和优异的整流特性以及阈值电压变化小的MESFET。

公开(公告)号：EP0175436B1

公开(公告)日：1992-02-05

申请号：EP85303006.2

申请日：1985-04-29

申请人： NORTHERN TELECOM LIMITED

发明人： Greene, Peter David ,  Renner, Daniel S.O. c/o Marijo Jones

IPC分类号： H01L21/205 ,  H01L33/00 ,  C30B25/22

CPC分类号： C23C16/4488 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02546 ,  H01S5/2095 ,  H01S5/227 ,  H01S5/2275 ,  Y10S148/065 ,  Y10S148/119

公开(公告)号：EP0426877B1

公开(公告)日：1995-08-23

申请号：EP90907474.2

申请日：1990-05-29

申请人： JAPAN ENERGY CORPORATION

发明人： SHIMAKURA, Haruhito Nippon Mining Co., Ltd ,  ODA, Osamu Nippon Mining Co., Ltd ,  KAINOSHO, Keiji Nippon Mining Co., Ltd

IPC分类号： H01L21/316 ,  H01L21/28

CPC分类号： H01L29/66522 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/28581 ,  H01L21/31666 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S148/119

摘要： A method of producing semiconductor devices wherein a compound semiconductor substrate is contained in a quartz ampoule together with an oxygen gas and elements having higher vapor pressures among those elements constituting the substrate, the ampoule is then sealed and is heated to form an oxide film on the surface of the compound semiconductor substrate, followed by the formation of an electrode metal layer thereon. Thus, there are formed a MOS diode having a small interface level density and a Schottky electrode having a great barrier height and a small ideal factor. Namely, there are obtained a Schottky diode having a good forward current vs. voltage characteristic, a small reverse current and excellent rectifying property and MESFET having small variations in the threshold voltage.

公开(公告)号：EP0362952A1

公开(公告)日：1990-04-11

申请号：EP89202472.0

申请日：1989-10-02

申请人： Philips Electronics N.V.

发明人： Staring, Aemilianus Gradus Johannes

IPC分类号： C30B25/02 ,  C30B29/40

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/40 ,  G05B2219/49013 ,  Y10S148/11 ,  Y10S148/119

摘要： A method of manufacturing an epitaxial InP layer on a substrate surface by means of a MOVPE process at atmospheric pressure, cyclopentadienyl indium (I) or alkyl cyclopentadienyl indium (I) being used as the indium precursor, thereby precluding side reactions.

摘要翻译： 在大气压下通过MOVPE工艺在衬底表面上制造外延InP层的方法，使用环戊二烯基铟（I）或烷基环戊二烯基铟（I）作为铟前体，从而排除副反应。

公开(公告)号：EP0305990A2

公开(公告)日：1989-03-08

申请号：EP88114187.3

申请日：1988-08-31

申请人： RESEARCH DEVELOPMENT CORPORATION OF JAPAN ,  SUMITOMO ELECTRIC INDUSTRIES LIMITED ,  TOKYO INSTITUTE OF TECHNOLOGY

发明人： Nishizawa, Hideaki ,  Takahashi, Mitsuo ,  Suematsu, Yasuharu

IPC分类号： H01S3/19 ,  H01L21/306

CPC分类号： H01S5/125 ,  Y10S148/095 ,  Y10S148/119

摘要： Disclosed are a distributed Bragg reflector type semiconductor laser and a method of manufacturing such a laser a high yields, in which the upper surface of an active waveguide is covered by an external waveguide, the external waveguide is disposed on the same surface as the active waveguide at side portions thereof, the external waveguide is coupled with the edge surfaces of the active waveguide without any gap remaining, and the coupling ratio of the active waveguide and external waveguide is high.

摘要翻译： 本发明公开了一种分布式布拉格反射体型半导体激光器及其制造方法，其中有源波导的上表面被外部波导覆盖，外部波导设置在与有源波导相同的表面上 在其侧面部分，外部波导与有源波导的边缘表面耦合，而没有任何间隙，并且有源波导和外部波导的耦合比高。

公开(公告)号：EP0233725A2

公开(公告)日：1987-08-26

申请号：EP87300903.9

申请日：1987-02-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Kinoshita, Jun'ichi c/o Patent Division ,  Suzuki, Nobuo c/o Patent Division ,  Morinaga, Motoyasu c/o Patent Division ,  Hirayama, Yuzo c/o Patent Division ,  Nakamura, Masaru c/o Patent Division

IPC分类号： H01L29/80 ,  H01L27/15 ,  H01L33/00 ,  H01S3/19 ,  H01L21/28 ,  H01L21/306 ,  H01L21/82 ,  H01L21/76

CPC分类号： H01S5/0422 ,  H01L21/30612 ,  H01L21/8252 ,  H01L27/15 ,  H01L29/812 ,  H01L33/0062 ,  H01S5/0208 ,  H01S5/0261 ,  H01S5/06203 ,  H01S5/20 ,  H01S5/32391 ,  Y10S148/053 ,  Y10S148/095 ,  Y10S148/119

摘要： In a monolithic OEIC in which an FET (Q1) and a light-emitting device (LD) are integrated, the light-emitting device (LD) has a first clad layer (14), an active layer (15,), and a second clad layer (17) stacked on a substrate (11), the FET (Q1) has a channel layer (12) and source and drain layers (14 2 , 14 3 ) with a high impurity concentration stacked on the substrate (11), etching mask layers (15 2 , 15 3 ) on the source and drain layers (14 2 , 14 3 ), and a gate electrode (22) formed on a channel layer (12) between source and drain electrodes (21 1 , 21 2 ) and the source and drain layers (14 2 , 14 3 ), the first clad layer (14 1 ) of the light-emitting diode (LD) and the source and drain layers (14 2 , 14 3 ) with a high impurity concentration of the FET (Q 1 ) are formed of the same semiconductor layer, and an active layer (15 1 ) of the light-emitting device (LD) and the etching mask layers (15 2 , 15 3 ) of the FET (Q1) are formed of the same semiconductor layer.

摘要翻译： 在集成了FET（Q1）和发光元件（LD）的单片式OEIC中，发光元件（LD）具有第一包覆层（14），活性层（15）和 （11）上堆叠的第二覆盖层（17），FET（Q1）具有沟道层（12）和堆叠在衬底（11）上的具有高杂质浓度的源极和漏极层（142,143） 在源极和漏极层（142,143）上的掩模层（152,153）以及在源极和漏极电极（211,212）与源极和漏极层之间的沟道层（12）上形成的栅极电极（22） （142,143），发光二极管（LD）的第一覆盖层（141）和FET（Q1）的高杂质浓度的源极和漏极层（142,143）由相同的半导体 层，并且发光器件（LD）的有源层（151）和FET（Q1）的蚀刻掩模层（152,153）由相同的半导体层形成。

公开(公告)号：EP0420143B1

公开(公告)日：1995-04-12

申请号：EP90118380.6

申请日：1990-09-25

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Kamei, Hidenori, c/o Yokohama Works

IPC分类号： H01L33/00 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01L33/0062 ,  H01S5/2081 ,  H01S5/2201 ,  H01S5/2275 ,  Y10S148/026 ,  Y10S148/051 ,  Y10S148/095 ,  Y10S148/119 ,  Y10S148/169 ,  Y10S438/978

公开(公告)号：EP0362952B1

公开(公告)日：1993-08-11

申请号：EP89202472.0

申请日：1989-10-02

申请人： Philips Electronics N.V.

发明人： Staring, Aemilianus Gradus Johannes

IPC分类号： C30B25/02 ,  C30B29/40

CPC分类号： C30B25/02 ,  C23C16/301 ,  C30B29/40 ,  G05B2219/49013 ,  Y10S148/11 ,  Y10S148/119

公开(公告)号：EP0444350A3

公开(公告)日：1992-01-29

申请号：EP90313661.2

申请日：1990-12-14

申请人： AT&T Corp.

发明人： Strege, Keith Elden

IPC分类号： H01L33/00 ,  G02B5/18 ,  H01S3/085 ,  H01S3/19

CPC分类号： H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/32391 ,  Y10S148/072 ,  Y10S148/095 ,  Y10S148/119

摘要： A quaternary semiconductor diffraction grating 21, such as an InGaAsP grating suitable for a DFB laser, is embedded in a semiconductor laser 32, such as InP. In one embodiment, the grating is fabricated by
(1) forming on the top surface of an InP layer 10 an epitaxial layer of InGaAsP 11 coated with an epitaxial layer of InP 12 having a thickness which is greater than that of the InGaAsP layer; (2) forming a pattern of apertures 20 penetrating through the layers of InP and InGaAsP; and (3) heating the layers to a temperature sufficient to cause a mass transport of InP from the InP epitaxial layer 22, the thickness of the InP layer being sufficient to bury the entire surface of the InGaAsP layer 21 with InP.

公开(公告)号：EP0426877A1

公开(公告)日：1991-05-15

申请号：EP90907474.2

申请日：1990-05-29

申请人： JAPAN ENERGY CORPORATION

发明人： SHIMAKURA, Haruhito Nippon Mining Co., Ltd ,  ODA, Osamu Nippon Mining Co., Ltd ,  KAINOSHO, Keiji Nippon Mining Co., Ltd

IPC分类号： H01L21/316 ,  H01L21/28

CPC分类号： H01L29/66522 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/28581 ,  H01L21/31666 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S148/119

摘要： A method of producing semiconductor devices wherein a compound semiconductor substrate is contained in a quartz ampoule together with an oxygen gas and elements having higher vapor pressures among those elements constituting the substrate, the ampoule is then sealed and is heated to form an oxide film on the surface of the compound semiconductor substrate, followed by the formation of an electrode metal layer thereon. Thus, there are formed a MOS diode having a small interface level density and a Schottky electrode having a great barrier height and a small ideal factor. Namely, there are obtained a Schottky diode having a good forward current vs. voltage characteristic, a small reverse current and excellent rectifying property and MESFET having small variations in the threshold voltage.

摘要翻译： 一种制造半导体器件的方法，其中化合物半导体衬底与构成衬底的那些元素中的氧气和较高蒸气压的元素一起包含在石英安瓿中，然后将安瓿密封并加热以形成氧化膜 化合物半导体衬底的表面，然后在其上形成电极金属层。 因此，形成了具有小的界面密度的MOS二极管和具有大的势垒高度和小的理想因子的肖特基电极。 即，得到肖特基二极管具有良好的正向电流对电压特性，小的反向电流和优异的整流特性以及阈值电压变化小的MESFET。