OPTOELECTRONIC DEVICE
    1.
    发明公开

    公开(公告)号:EP3336866A1

    公开(公告)日:2018-06-20

    申请号:EP18155003.9

    申请日:2013-05-20

    IPC分类号: H01G9/20 H01L51/42 H01L51/00

    摘要: The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.The invention further provides a mixed-halide perovskite of the formula (I)

            [A][B][X] 3      (I)

    wherein: [A] is at least one amidinium based cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.