公开(公告)号：EP1540733A2

公开(公告)日：2005-06-15

申请号：EP03750563.3

申请日：2003-09-15

申请人： Quantum Semiconductor, LLC

发明人： AUGUSTO, Carlos, J., R., P.

IPC分类号： H01L27/144 ,  H01L27/02 ,  H01L31/10

CPC分类号： H01L27/14669 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/1075

摘要： A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are epitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The epitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible to fabricate silicon­based and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Germanium-On-Insulator (GeOI).

公开(公告)号：EP1540733B1

公开(公告)日：2008-07-16

申请号：EP03750563.3

申请日：2003-09-15

申请人： Quantum Semiconductor, LLC

发明人： AUGUSTO, Carlos, J., R., P.

IPC分类号： H01L27/144 ,  H01L27/02 ,  H01L31/10

CPC分类号： H01L27/14669 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/1075

摘要： A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are epitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The epitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible to fabricate silicon­based and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Germanium-On-Insulator (GeOI).

公开(公告)号：EP1782481A1

公开(公告)日：2007-05-09

申请号：EP05768673.5

申请日：2005-07-28

申请人： Quantum Semiconductor, LLC

发明人： AUGUSTO, Carlos, J., R., P.

IPC分类号： H01L27/15 ,  H01L27/144 ,  H01L33/00 ,  H01L31/107 ,  H01L31/0352 ,  H01L31/103 ,  H01L31/028

CPC分类号： H01L27/15 ,  H01L27/142 ,  H01L27/1443 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/02027 ,  H01L31/035236 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06

摘要： Photonic devices monolithically integrated with CMOS are disclosed, including sub-100nm CMOS, with active layers comprising acceleration regions, light emission and absorption layers, and optional energy filtering regions. Light emission or absorption is controlled by an applied voltage to deposited films on a pre-defined CMOS active area of a substrate, such as bulk Si, bulk Ge, Thick-Film SOI, Thin-Film SOI, Thin-Film GOI.