利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.013 秒)

    LIGHT-SENSING DEVICE
    1.
    发明授权
    LIGHT-SENSING DEVICE 有权
    光检测装置

    公开(公告)号：EP1540733B1

    公开(公告)日：2008-07-16

    申请号：EP03750563.3

    申请日：2003-09-15

    申请人： Quantum Semiconductor, LLC

    发明人： AUGUSTO, Carlos, J., R., P.

    IPC分类号： H01L27/144 ,  H01L27/02 ,  H01L31/10

    CPC分类号： H01L27/14669 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/1075

    摘要： A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are epitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The epitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible to fabricate silicon­based and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Germanium-On-Insulator (GeOI).

    METHOD OF FABRICATING HETEROJUNCTION PHOTODIODES INTEGRATED WITH CMOS
    5.
    发明授权
    METHOD OF FABRICATING HETEROJUNCTION PHOTODIODES INTEGRATED WITH CMOS 有权
    工艺与集成的CMOS异质结光电二极管PRODUCING

    公开(公告)号：EP1328975B1

    公开(公告)日：2011-04-27

    申请号：EP01976306.9

    申请日：2001-10-12

    申请人： Quantum Semiconductor, LLC

    发明人： Augusto, Carlos J.R.P. ,  Forester, Lynn

    IPC分类号： H01L27/144 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0352

    CPC分类号： B82Y20/00 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： A method in which thin-film p-i-n heterojunction photodiodes are formed by selective epitaxial growth/deposition on pre-designated active-area regions of standard CMOS devices. The thin-film p-i-n photodiodes are formed on active areas (for example n+-doped), and these are contacted at the bottom (substrate) side by the 'well contact' corresponding to that particular active area. There is no actual potential well since that particular active area has only one type of doping. The top of each photodiode has a separate contact formed thereon. The selective epitaxial growth of the p-i-n photodiodes is modular, in the sense that there is no need to change any of the steps developed for the 'pure' CMOS process flow. Since the active region is epitaxially deposited, there is the possibility of forming sharp doping profiles and band-gap engineering during the epitaxial process, thereby optimizing several device parameters for higher performance. This new type of light sensor architecture, monolithically integrated with CMOS, decouples the photo-absorption active region from the MOSFETs, hence the bias applied to the photodiode can be independent from the bias between the source, drain, gate and substrate (well) of the MOSFETs.

    ASYNCHRONOUS SERIAL ANALOG-TO-DIGITAL CONVERTER METHODOLOGY HAVING DYNAMIC ADJUSTMENT OF THE BANDWITH
    9.
    发明授权
    ASYNCHRONOUS SERIAL ANALOG-TO-DIGITAL CONVERTER METHODOLOGY HAVING DYNAMIC ADJUSTMENT OF THE BANDWITH 有权
    FOR SERIAL方法，具有动态带宽异步模数转换停产

    公开(公告)号：EP1530823B1

    公开(公告)日：2007-05-30

    申请号：EP03766396.0

    申请日：2003-07-31

    申请人： Quantum Semiconductor, LLC

    发明人： Augusto, Carlos J.R.P. ,  Diniz, Pedro N.C.

    IPC分类号： H03M1/54

    CPC分类号： H03M1/125 ,  H03M1/54 ,  H03M1/60

    摘要： A new methodology is disclosed to convert analog electric signals into digital data. The method provides a serial scheme without pre-definition of the number of bits (dynamic range). It allows digital processing of the input signal without sampling and holding of the input signal. Processing of the input signal is clock-less and asynchronously dependent on the time-evolution of the input signal itself. Thereby, a programmable, dynamic adjustment of bandwidth (product of dynamic range and speed of conversion) of the analog-to-digital conversion process can be achieved depending on the characteristics of the input signal. Dynamic adjustment of the bandwidth is accomplished by digitally controlling a 'threshold' value at the input capacitor of the comparator, which when met by the input signal, triggers a transition at the output of the comparator.