公开(公告)号：EP0331103A3

公开(公告)日：1990-12-27

申请号：EP89103486.0

申请日：1989-02-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Sasaki, Goro c/o Yokohama Works of

IPC分类号： H01L27/14 ,  H01L29/76 ,  H01L27/06

CPC分类号： H01L27/1443 ,  Y10S148/119 ,  Y10S148/12

摘要： Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate,
the field effect transistor comprising a high electron mobility transistor having:
a GaInAs layer epitaxially grown on the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, and
the photo-diode comprising a PIN photo-diode having:
the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.

公开(公告)号：EP0331103A2

公开(公告)日：1989-09-06

申请号：EP89103486.0

申请日：1989-02-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Sasaki, Goro c/o Yokohama Works of

IPC分类号： H01L27/14 ,  H01L29/76 ,  H01L27/06

CPC分类号： H01L27/1443 ,  Y10S148/119 ,  Y10S148/12

摘要： Present invention is to provide a process for producing an opto-electronic integrated circuit comprising a field effect transistor as an electronic device and a photo-diode as an optical device both formed on an InP substrate,
the field effect transistor comprising a high electron mobility transistor having:
a GaInAs layer epitaxially grown on the InP substrate in a preset region thereof, a n-AlInAs layer epitaxially grown on the GaInAs layer, a gate electrode formed on the AlInAs layer, and a source electrode and a drain electrode formed on the AlInAs layer with the gate electrode therebetween, and
the photo-diode comprising a PIN photo-diode having:
the GaInAs layer epitaxially grown on the InP substrate near the region of the field effect transistor simultaneously with the growth of that of the field effect transistor, the n-AlInAs layer epitaxially grown on the GaInAs layer simultaneously with the growth of that of the field effect transistor, a n-InP layer epitaxially grown on the n-AlInAs layer, an undoped GaInAs layer epitaxially grown on the n-InP layer in a preset region thereof, a p-GaInAs layer epitaxially grown on the undoped GaInAs layer, an anode electrode formed on the p-GaInAs layer, and a cathode electrode formed on the n-InP layer near the undoped GaInAs layer.

摘要翻译： 本发明提供一种制造光电集成电路的方法，所述光电集成电路包括作为电子器件的场效应晶体管和均匀地形成在InP衬底上的光电二极管，所述场效应晶体管包括高电子迁移率晶体管 具有：在其预置区域中在InP衬底上外延生长的GaInAs层，在GaInAs层上外延生长的n-AlInAs层，形成在AlInAs层上的栅电极和形成在AlInAs上的源电极和漏电极 层，其间具有栅电极，并且光电二极管包括PIN光电二极管，其具有在场效应晶体管的区域附近外延生长在InP衬底上的GaInAs层，同时场效应晶体管的生长， 在GaInAs层上外延生长的n-AlInAs层与场效应晶体管的生长同时生长，n-InP层外延生长在 n-AlInAs层，在其预置区域中在n-InP层上外延生长的未掺杂的GaInAs层，在未掺杂的GaInAs层外延生长的p-GaInAs层，形成在p-GaInAs层上的阳极电极和阴极 电极在未掺杂的GaInAs层附近形成在n-InP层上。

公开(公告)号：EP0331103B1

公开(公告)日：1994-09-21

申请号：EP89103486.0

申请日：1989-02-28

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Sasaki, Goro c/o Yokohama Works of

IPC分类号： H01L27/14 ,  H01L29/76 ,  H01L27/06

CPC分类号： H01L27/1443 ,  Y10S148/119 ,  Y10S148/12