NON-VOLATILE MEMORY SYSTEM WITH PROGRAM TIME CONTROL
    1.
    发明授权
    NON-VOLATILE MEMORY SYSTEM WITH PROGRAM TIME CONTROL 有权
    具有程序时间控制的非易失性存储器系统

    公开(公告)号:EP1769508B1

    公开(公告)日:2007-12-26

    申请号:EP05770198.9

    申请日:2005-07-08

    IPC分类号: G11C16/10 G11C16/30

    CPC分类号: G11C16/10 G11C16/30

    摘要: In a non-volatile memory system (20), when it is discovered that the voltage pump pulse provided by a charge pump (32) for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.

    摘要翻译: 在非易失性存储器系统(20)中,当发现由用于编程存储器单元的电荷泵(32)提供的电压泵脉冲与参考电压不匹配时,电压泵脉冲的编程时间段是 调整为在编程周期结束前保持基本不变的值。 以这种方式,编程脉冲的有效编程时间周期中的波动被阻止用于编程周期的其余部分,使得阈值电压分布的扩展不会发生或将减少。 此功能允许为编程脉冲指定一个较短的编程时间段以提高性能,同时允许电荷泵在其导致其缓慢和/或较弱的条件下运行时增加编程时间段的灵活性。

    NON-VOLATILE MEMORY SYSTEM WITH PROGRAM TIME CONTROL
    2.
    发明公开
    NON-VOLATILE MEMORY SYSTEM WITH PROGRAM TIME CONTROL 有权
    与时间控制非易失性存储器系统方案

    公开(公告)号:EP1769508A1

    公开(公告)日:2007-04-04

    申请号:EP05770198.9

    申请日:2005-07-08

    IPC分类号: G11C16/10 G11C16/30

    CPC分类号: G11C16/10 G11C16/30

    摘要: In a non-volatile memory system (20), when it is discovered that the voltage pump pulse provided by a charge pump (32) for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.