公开(公告)号：EP2016590B1

公开(公告)日：2011-10-26

申请号：EP07783139.4

申请日：2007-05-02

申请人： SanDisk Corporation

发明人： LI, Yan

IPC分类号： G11C16/26 ,  G11C11/56 ,  G11C7/22

CPC分类号： G11C16/26 ,  G06F12/0893 ,  G06F2212/2022 ,  G06F2212/3042 ,  G11C7/1039 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/22 ,  G11C11/5628 ,  G11C11/5642 ,  G11C2207/107 ,  G11C2207/2245 ,  G11C2207/2281

摘要： Part of the latency from memory read or write operations is for data to be input to or output from the data latches of the memory via an I/O bus. Methods and circuitry are present for improving performance in non-volatile memory devices by allowing the memory to perform some of these data caching and transfer operations in the background while the memory core is busy with a read operation. A scheme for caching read data is implemented so that even when the read for a current page on a current wordline must be preceded by a prerequisite read of data on an adjacent wordline, the prerequisite read along with any I/O access is preemptively done in the cycle for reading a previous page so that the current read can be performed while the previously read page is busy with the I/O access.

公开(公告)号：EP2047473B1

公开(公告)日：2011-08-31

申请号：EP07799656.9

申请日：2007-07-18

申请人： Sandisk Corporation

发明人： FONG, Yupin ,  LI, Yan

IPC分类号： G11C11/56

CPC分类号： G11C11/5642 ,  G11C16/0483 ,  G11C16/3418

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

公开(公告)号：EP2304736A1

公开(公告)日：2011-04-06

申请号：EP09774330.6

申请日：2009-06-30

申请人： Sandisk Corporation

发明人： LUTZE, Jeffrey, W. ,  LI, Yan

IPC分类号： G11C16/34 ,  G11C16/16 ,  G11C11/56

CPC分类号： G11C16/3404 ,  G11C11/5635 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3413 ,  G11C16/3463

摘要： A non-volatile storage system corrects over programmed memory cells by selectively performing one or more erase operations on a subset of non-volatile storage elements that are connected to a common word line (or other type of control line).

公开(公告)号：EP2047474B1

公开(公告)日：2010-06-30

申请号：EP07799657.7

申请日：2007-07-18

申请人： Sandisk Corporation

发明人： LI, Yan

IPC分类号： G11C16/34 ,  G11C11/56

CPC分类号： G11C16/3418 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3427 ,  G11C16/344 ,  G11C29/00 ,  G11C2211/5621

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

公开(公告)号：EP2070090A1

公开(公告)日：2009-06-17

申请号：EP07842100.5

申请日：2007-09-07

申请人： Sandisk Corporation

发明人： LI, Yan ,  FONG, Yupin Kawing ,  MOKHLESI, Nima

IPC分类号： G11C16/34

CPC分类号： G11C7/1006 ,  G11C7/02 ,  G11C7/1039 ,  G11C7/1051 ,  G11C7/1063 ,  G11C7/20 ,  G11C11/5621 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3427 ,  G11C2207/2245

摘要： Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generated pseudo randomization or user driven randomization in different embodiments. User driven commands, the timing of which cannot be predicted may be used to trigger and achieve a high level of randomization. Randomly altering the encoding scheme of the data prevents repeated and long term storage of specific data patterns. Even if a user wishes to store the same information for long periods, or to repeatedly store it, it will be randomly encoded with different encoding schemes, and the data pattern will therefore be varied.

公开(公告)号：EP2047473A2

公开(公告)日：2009-04-15

申请号：EP07799656.9

申请日：2007-07-18

申请人： Sandisk Corporation

发明人： FONG, Yupin ,  LI, Yan

IPC分类号： G11C11/56

CPC分类号： G11C11/5642 ,  G11C16/0483 ,  G11C16/3418

摘要： Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

公开(公告)号：EP1665284B1

公开(公告)日：2008-02-27

申请号：EP04784312.3

申请日：2004-09-16

申请人： SanDisk Corporation

发明人： KHALID, Shahzad ,  LI, Yan ,  CERNEA, Raul-Adrian ,  MOFIDI, Mehrdad

IPC分类号： G11C16/34 ,  G11C16/04

CPC分类号： G11C16/3468 ,  G11C16/0483

摘要： When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added as voltage offset to a bit line of a storage unit under programming. The voltage offset is a predetermined function of whether none or one or both of its neighbors are in a mode that creates perturbation, such as in a program inhibit mode. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.

公开(公告)号：EP1769508B1

公开(公告)日：2007-12-26

申请号：EP05770198.9

申请日：2005-07-08

申请人： SanDisk Corporation

发明人： MOOGAT, Farookh ,  LI, Yan ,  MAK, Alexander K.

IPC分类号： G11C16/10 ,  G11C16/30

CPC分类号： G11C16/10 ,  G11C16/30

摘要： In a non-volatile memory system (20), when it is discovered that the voltage pump pulse provided by a charge pump (32) for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.

摘要翻译： 在非易失性存储器系统（20）中，当发现由用于编程存储器单元的电荷泵（32）提供的电压泵脉冲与参考电压不匹配时，电压泵脉冲的编程时间段是 调整为在编程周期结束前保持基本不变的值。 以这种方式，编程脉冲的有效编程时间周期中的波动被阻止用于编程周期的其余部分，使得阈值电压分布的扩展不会发生或将减少。 此功能允许为编程脉冲指定一个较短的编程时间段以提高性能，同时允许电荷泵在其导致其缓慢和/或较弱的条件下运行时增加编程时间段的灵活性。

公开(公告)号：EP1769508A1

公开(公告)日：2007-04-04

申请号：EP05770198.9

申请日：2005-07-08

申请人： SanDisk Corporation

发明人： MOOGAT, Farookh ,  LI, Yan ,  MAK, Alexander K.

IPC分类号： G11C16/10 ,  G11C16/30

CPC分类号： G11C16/10 ,  G11C16/30

摘要： In a non-volatile memory system (20), when it is discovered that the voltage pump pulse provided by a charge pump (32) for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.

公开(公告)号：EP1652191B1

公开(公告)日：2007-03-07

申请号：EP04756719.3

申请日：2004-07-07

申请人： SanDisk Corporation

发明人： CHEN, Jian ,  LI, Yan ,  LUTZE, Jeffrey, W.

IPC分类号： G11C16/34

CPC分类号： G11C16/3404 ,  G11C16/3454

摘要： In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed due to programming cells of an adjacent row.