公开(公告)号：EP1953124A4

公开(公告)日：2011-05-04

申请号：EP06821949

申请日：2006-10-12

申请人： TOYO TANSO CO

发明人： SAITO KIYOSHI ,  YOKOYAMA FUMIAKI ,  SUZUKI HITOSHI ,  ANDO ATSUKO ,  TOJO TETSURO ,  SHINOHARA SEIJI

IPC分类号： C04B35/52 ,  C01B31/04 ,  C04B35/532 ,  H01J37/317

CPC分类号： H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

摘要： The problem of the present invention is to provide, in high current - low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m 3 and an electric resistivity of not more than 9.5 µ©·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm -1 by G band intensity at 1570 cm -1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.

摘要翻译： 本发明的问题是在高电流 - 低能量型离子注入装置中，提供一种用于离子注入装置的束线内部构件的石墨构件，该石墨构件可以显着地减少结合在晶片表面中的颗粒。 该问题可以通过本发明的石墨构件来解决，该石墨构件是用于离子注入装置的束线内部构件的石墨构件，其堆积密度不小于1.80Mg / m 3，电阻率 不大于9.5μ©·m。 优选地，在石墨构件的自发断裂面的拉曼光谱中，将1370cm -1处的D带强度除以1570cm -1处的G带强度得到的R值不大于0.20。