公开(公告)号：EP1662543B1

公开(公告)日：2012-03-14

申请号：EP05255331.0

申请日：2005-08-31

Applicant: SEN Corporation, an SHI and Axcelis Company

Inventor： Kabasawa, Mitsuaki ,  Tsukihara, Mitsukuni ,  Sogabe, Hiroshi

IPC: H01J37/05 ,  H01J37/09

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/30477 ,  H01J2237/31705

公开(公告)号：EP1314182B1

公开(公告)日：2008-12-10

申请号：EP01960909.8

申请日：2001-08-21

Applicant: Axcelis Technologies, Inc.

Inventor： HARRINGTON, Eric, Ryan ,  BENVENISTE, Victor, Maurice ,  GRAF, Michael, Anthony ,  RATHMELL, Robert, Day

IPC: H01J37/317 ,  H01J37/02

CPC classification number: H01J3/40 ,  H01J37/026 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes an electric field generator (12, 14) for generating an electric field (28) relative to a path of travel (20) for the ion beam (16). A particle (66) located in the ion beam (16) and in a region of the electric field (28) is charged to a polarity according to the ion beam (16), so that the electric field (28) may urge the charged particle (66) out of the ion beam (16).

公开(公告)号：EP1964148A2

公开(公告)日：2008-09-03

申请号：EP06848020.1

申请日：2006-12-20

Applicant: AXCELIS TECHNOLOGIES, INC. ,  Divergilio, William ,  Tieger, Daniel ,  Joyce, Sean

Inventor： REYNOLDS, William ,  HODGDON, Christopher

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3171 ,  B08B7/0035 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A deposit cleaning system for removing deposits from interior surfaces of ion sources includes a fluorine source, a throttle mechanism, and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism mitigates loss of fluorine through a source aperture of the ion source by at least partially covering the source aperture. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the positioning of the throttle mechanism.

公开(公告)号：EP1662543A2

公开(公告)日：2006-05-31

申请号：EP05255331.0

申请日：2005-08-31

Applicant: SUMITOMO EATON NOVA CORPORATION

Inventor： Kabasawa, Mitsuaki ,  Tsukihara, Mitsukuni ,  Sogabe, Hiroshi

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/30477 ,  H01J2237/31705

Abstract: Irradiation system that comprises a beam generation source (1), a mass analysis device (3), a beam transformer, a deflector (7) for scanning which swings the beam reciprocally, a beam parallelizing device (10,29), an acceleration/deceleration device (11,12), and an energy filtering device (18), and a hybrid angular energy filter (18) generating both electric and magnetic fields to ajust trajectories is provided as the energy filtering device, along with a pair of multi-surface energy slit units (19,19') each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

Abstract translation: 辐射系统，包括光束发生源（1），质量分析装置（3），光束变换器，用于使光束往复摆动的扫描的偏转器（7），光束并行化装置（10,29），加速度/ 减速装置（11,12）和能量过滤装置（18），以及产生电场和磁场的混合角能量滤波器（18），用于调节轨迹，作为能量过滤装置， 在混合角能量滤波器的下游侧还进一步设置具有能够在其间切换的多个能量狭缝的表面能量狭缝单元（19,19'）。 在诸如中性粒子，不同种类的掺杂剂，具有不同能量的离子，金属和灰尘颗粒的污染物的量非常小的条件下，可以从具有低能量到高能量的大电流束选择性地照射目标晶片 。

公开(公告)号：EP0491313B1

公开(公告)日：1996-10-16

申请号：EP91121500.2

申请日：1991-12-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Bright, Nicholas ,  Burgin, David Richard ,  Morgan, Timothy Grey ,  Lowrie, Craig John ,  Ito, Hiroyuki

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/09

CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/31705

公开(公告)号：EP1953124B1

公开(公告)日：2018-01-17

申请号：EP06821949.2

申请日：2006-10-12

Applicant: Toyo Tanso Co., Ltd.

Inventor： SAITO, Kiyoshi ,  YOKOYAMA, Fumiaki ,  SUZUKI, Hitoshi ,  ANDO, Atsuko ,  TOJO, Tetsuro ,  SHINOHARA, Seiji

IPC: C01B32/20 ,  C04B35/52 ,  H01J37/317 ,  C04B35/532 ,  H01J37/16

CPC classification number: H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: The problem of the present invention is to provide, in high current - low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m 3 and an electric resistivity of not more than 9.5 µ©·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm -1 by G band intensity at 1570 cm -1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.

公开(公告)号：EP2426693A3

公开(公告)日：2013-01-16

申请号：EP11009107.1

申请日：2000-12-13

Applicant: Semequip, Inc.

Inventor： Horsky, Thomas N. ,  Williams, John N.

IPC: H01J37/08 ,  H01J3/02 ,  H01J37/317 ,  C23C14/48 ,  H01J27/20 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: In an ion source (1) for use with an ion implant device comprising:
an ionization chamber (5) defined by a plurality of side walls defining an ionization volume (16), one (13) of said side walls including an ion extraction aperture (37) for enabling an ion beam to be extracted from said ionization chamber (16) along a predetermined axis defining an ion beam axis; and a gas source (2) in fluid communication with said ionization chamber (16); an electron source (12) for producing an electron beam for ionizing the gas in said ionization chamber (16); said electron source (12) has an emitter (33) external to the ionization volume (16) and one (13) of said sidewalls (13) includes an electron entrance aperture , said emitter (33) configured relative to said aperture to cause an electron beam (32) to be directed across the ionization chamber (16) and ionize said gas by direct electron impact ionization by energetic electrons

公开(公告)号：EP1964148B1

公开(公告)日：2010-01-20

申请号：EP06848020.1

申请日：2006-12-20

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Reynolds, William ,  Hodgdon, Christopher ,  Divergilio, Wiliam ,  Tieger, Daniel ,  Joyce, Sean

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3171 ,  B08B7/0035 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A deposit cleaning system for removing deposits from interior surfaces of ion sources includes a fluorine source, a throttle mechanism, and a controller. The fluorine source supplies fluorine to the ion source as a cleaning material. The throttle mechanism mitigates loss of fluorine through a source aperture of the ion source by at least partially covering the source aperture. The controller controls the supply and flow rate from the fluorine source to the ion source and also controls the positioning of the throttle mechanism.

公开(公告)号：EP1944790A3

公开(公告)日：2008-12-03

申请号：EP08250039.8

申请日：2008-01-07

Applicant: Applied Materials, Inc.

Inventor： Collart, Erik ,  King, Michael John

IPC: H01J37/317 ,  H01J37/02

CPC classification number: H01J37/3171 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/31705

Abstract: The present invention relates to components in ion implanters having surfaces adjacent to the path of the ion beam through the ion implanter. Such surfaces will be prone to deposition and the present invention addresses problems associated with delamination of deposited material. An ion implanter component is provided that has a surface defining at least in part an ion beam path through the ion implanter, wherein at least a portion of the surface has been roughened. The portion of the surface may be roughened to provide surface features defined at least in part by sharp changes in orientation of adjacent parts of the surface.

公开(公告)号：EP1949405A2

公开(公告)日：2008-07-30

申请号：EP06827769.8

申请日：2006-11-10

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： REECE, Roanld ,  KONDRATENKO, Serguei ,  RA, Grumjoo ,  WAINWRIGHT, Louis ,  CAI, Gary

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/31705 ,  H01L21/26513

Abstract: A contamination mitigation or surface modification system for ion implantation processes includes a gas source, a controller, a valve, and a process chamber. The gas source provides delivery of a gas, be it atmospheric or reactive, to the valve and is controlled by the controller. The valve is located on or about the process chamber and controllably adjusts flow rate and/or composition of the gas to the process chamber. The process chamber holds a target device, such as a target wafer and permits interaction of the gas with an ion beam to mitigate contamination of the target wafer and/or to modify the existing properties of the processing environment or target device to change a physical or chemical state or characteristic thereof. The controller selects and adjusts composition of the gas and flow rate according to contaminants present within the ion beam, or lack thereof, as well total or partial pressure analysis.