公开(公告)号：EP3170793B1

公开(公告)日：2019-05-08

申请号：EP15821835.4

申请日：2015-06-30

申请人： Thin Film Electronics ASA

发明人： ENDO, Masahisa ,  SON, Gun ,  GOTO, Yuichi ,  NAGAI, Kentaro

IPC分类号： C01B33/04 ,  C01B33/02 ,  C03C17/22 ,  C08G77/60

公开(公告)号：EP3252007A1

公开(公告)日：2017-12-06

申请号：EP15857135.6

申请日：2015-10-27

申请人： Thin Film Electronics ASA

发明人： GOTO, Yuichi ,  ENDO, Masahisa ,  SON, Gun

IPC分类号： C01B33/04 ,  C08G77/60

CPC分类号： C01B33/046 ,  B01D3/34 ,  C01B33/04 ,  C07C211/54 ,  C07C211/55 ,  C07C211/58 ,  C08G77/60 ,  C09K15/18

摘要： [Problem] To provide a polymerization inhibitor for silane that, when added at the time of heating distillation, enables purification of silane to a high degree because a polymer is not formed even if heating by distillation is performed and cyclic silane can be present as a monomer. To provide a composition containing polysilane obtained by using a polymerization inhibitor to obtain high-purity cyclic silane, in particular high-purity cyclopentasilane and polymerizing the cyclic silane is applied onto a substrate as a coating-type polysilane composition and fired, and this produces a good silicon thin film with high conductivity.
[Solution] A polymerization inhibitor for silane, the polymerization inhibitor including secondary or tertiary aromatic amines. The silane is cyclic silane. The silane is cyclopentasilane. The aromatic amines are secondary aromatic amines. The aromatic group is a phenyl group or a naphthyl group. The polymerization inhibitor is contained at a proportion of 0.01 to 10 mol% per mole of the silane. In the polymerization inhibitor, a boiling point of the aromatic amines is 196°C or higher.

摘要翻译： 本发明提供一种硅烷阻聚剂，其在加热蒸馏时添加时，即使通过蒸馏进行加热也不会形成聚合物，可以高纯度地进行硅烷的精制，并且环状硅烷作为 单体。 为了提供一种含有通过使用阻聚剂得到高纯度环状硅烷得到的聚硅烷的组合物，特别是高纯度环戊硅烷，并将该环状硅烷聚合，作为涂布型聚硅烷组合物涂布在基材上并进行烧成， 良好的导电性高的硅薄膜。 [解决方案]用于硅烷的阻聚剂，所述阻聚剂包括仲或叔芳族胺。 硅烷是环状硅烷。 硅烷是环戊硅烷。 芳香胺是仲芳香胺。 芳族基团是苯基或萘基。 相对于1摩尔硅烷，阻聚剂的含有比例为0.01〜10摩尔％。 在阻聚剂中，芳族胺的沸点为196℃或更高。

公开(公告)号：EP3170793A1

公开(公告)日：2017-05-24

申请号：EP15821835.4

申请日：2015-06-30

申请人： Thin Film Electronics ASA

发明人： ENDO, Masahisa ,  SON, Gun ,  GOTO, Yuichi ,  NAGAI, Kentaro

IPC分类号： C01B33/04 ,  C01B33/02 ,  C03C17/22 ,  C08G77/60

CPC分类号： C08G77/60 ,  B05D3/0254 ,  C01B33/02 ,  C01B33/021 ,  C01B33/04 ,  C03C17/22 ,  C09D5/24 ,  C09D183/16 ,  H01L21/02532

摘要： There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100°C to 425°C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

摘要翻译： 提供了一种高导电性和良好的硅薄膜，其通过将通过使用具有大重均分子量的聚硅烷制备的涂料型聚硅烷组合物施用到基材上，随后进行烘焙而获得。 重均分子量为5,000〜8000的聚硅烷。 聚硅烷可以是环戊硅烷的聚合物。 将通过将聚硅烷溶解于溶剂中的聚硅烷组合物涂布在基材上而在100℃〜425℃下进行烧成而得到的硅膜。 环戊硅烷可以在负载在聚合物上的钯催化剂存在下聚合。 负载在聚合物上的钯催化剂可以是其中作为催化剂组分的钯固定在官能聚苯乙烯上的催化剂。 钯可以是钯化合物或钯络合物。 钯固定化催化剂可以通过用功能聚苯乙烯微囊化零价钯络合物或二价钯化合物来形成。 零价钯络合物可以是四（三苯基膦）钯（0）​​络合物。

公开(公告)号：EP3248940A1

公开(公告)日：2017-11-29

申请号：EP15857977.1

申请日：2015-10-13

申请人： Thin Film Electronics ASA

发明人： GOTO, Yuichi ,  ENDO, Masahisa ,  Son, Gun ,  NAGAI, Kentaro

IPC分类号： C01B33/145 ,  C01B33/12 ,  C08G77/60

CPC分类号： C01B33/113 ,  B01J23/464 ,  C01B33/04 ,  C08G77/60 ,  C09D183/16 ,  H01L21/02107

摘要： [Problem] To provide a method of producing a silicon hydride oxide-containing organic solvent (coating solution) with which a silicon hydride oxide coating film can be formed on a substrate. Using the silicon hydride oxide-containing organic solvent makes it unnecessary to place a coating solution in non-oxidizing atmosphere at the time of coating of the substrate or to perform heat treatment on the substrate after the coating because a silicon hydride oxide is formed in the coating solution before the coating.
[Solution] A method of producing a silicon hydride oxide-containing organic solvent including: blowing an oxygen-containing gas on an organic solvent containing a silicon hydride or a polymer thereof. The silicon hydride is cyclic silane. The silicon hydride is cyclopentasilane. An oxide of the silicon hydride or the polymer thereof is contained at a proportion of (residual Si-H groups)/(Si-H groups before oxidation) = 1 to 40 mol%. The cyclic silane can be obtained by causing the cyclic silane to react with a hydrogen halide in cyclohexane in the presence of an aluminum halide, dissolving the obtained cyclic silane in an organic solvent and reducing it.

摘要翻译： 本发明的目的在于提供一种在基板上形成氢化硅氧化物被膜的含氢氧化硅的有机溶剂（涂布液）的制造方法。 通过使用含有氢氧化硅的有机溶剂，不需要在涂布基板时在非氧化性气氛中涂布涂布液，或者在涂布后在基板上进行热处理，因为氢化硅氧化物在 涂层前的涂层溶液。 [含有氢氧化硅的有机溶剂的制造方法，其特征在于，包括：在含有氢化硅或其聚合物的有机溶剂上吹入含氧气体。 硅氢化物是环状硅烷。 氢化硅是环戊硅烷。 氢化硅或其聚合物的氧化物以（残留Si-H基）/（氧化前的Si-H基）= 1〜40摩尔％的比例含有。 环状硅烷可以通过在卤化铝存在下使环状硅烷与环己烷中的卤化氢反应，将所得到的环状硅烷溶解于有机溶剂中并还原而得到。