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1.发明公开
公开(公告)号：EP0724300A3
公开(公告)日：1996-12-27
申请号：EP96104419.5
申请日：1991-10-31
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： The present invention provides a semiconductor surface emitting diode having a reflecting layer formed of different semiconductor materials for reflecting incident light to optical wave interference, an active layer formed by epitaxy for producing said incident light, and a light-emitting surface through which light produced by the active layer is emitted.
The reflective layer includes semiconductor films having different compositions superposed on each other, and the composition of said reflective layer changes continuously or in steps, in the direction of the thickness of said reflecting layer, at least at each interphase between the adjacent semiconductor films.摘要翻译： 一种具有由单元半导体（30,130,230,330）组成的反射层（14,114,214,314,414）的半导体器件，每个单元由30个不同组成的半导体膜组成。 单位半导体的厚度在反射层的厚度方向上连续或逐步变化，优选在朝向该层的光入射面的方向上减小。 例如，反射层具有单位半导体具有连续变化的厚度的变化厚度部分，并且可以包括其半导体具有相同厚度的等厚度部分。 在相邻膜的界面处的组成优选改变以减轻晶格失配，这导致该层的晶体缺陷。
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4.发明公开
公开(公告)号：EP0483868A2
公开(公告)日：1992-05-06
申请号：EP91118652.6
申请日：1991-10-31
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： A semiconductor device having a reflecting layer (14, 114, 214, 314, 414) consisting of unit semiconductors (30, 130, 230, 330) each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.
摘要翻译： 一种具有由单元半导体（30,130,230,330）组成的反射层（14,114,214,314,414）的半导体器件，每个单元由30个不同组成的半导体膜组成。 单位半导体的厚度在反射层的厚度方向上连续或逐步变化，优选在朝向该层的光入射面的方向上减小。 例如，反射层具有单位半导体具有连续变化的厚度的变化厚度部分，并且可以包括其半导体具有相同厚度的等厚度部分。 在相邻膜的界面处的组成优选改变以减轻晶格失配，这导致该层的晶体缺陷。
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公开(公告)号：EP0724300A2
公开(公告)日：1996-07-31
申请号：EP96104419.5
申请日：1991-10-31
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： The present invention provides a semiconductor surface emitting diode having a reflecting layer formed of different semiconductor materials for reflecting incident light to optical wave interference, an active layer formed by epitaxy for producing said incident light, and a light-emitting surface through which light produced by the active layer is emitted.
The reflective layer includes semiconductor films having different compositions superposed on each other, and the composition of said reflective layer changes continuously or in steps, in the direction of the thickness of said reflecting layer, at least at each interphase between the adjacent semiconductor films.摘要翻译： 本发明提供一种半导体表面发光二极管，其具有由不同的半导体材料形成的用于将入射光反射到光波干涉的反射层，通过外延生成用于产生所述入射光的有源层和发光表面，通过所述发光表面， 有源层被发射。 反射层包括具有彼此叠加的不同组成的半导体膜，并且至少在相邻半导体膜之间的每个中间相处，所述反射层的组成在所述反射层的厚度方向上连续地或逐步地变化。
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公开(公告)号：EP0483868A3
公开(公告)日：1992-08-12
申请号：EP91118652.6
申请日：1991-10-31
IPC分类号： H01L33/00
CPC分类号： H01L33/10
摘要： A semiconductor device having a reflecting layer (14, 114, 214, 314, 414) consisting of unit semiconductors (30, 130, 230, 330) each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.
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