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公开(公告)号：EP0778613A1
公开(公告)日：1997-06-11
申请号：EP96119388.5
申请日：1996-12-03
发明人： Katsuyama, Akiko , Endo, Masayuki
IPC分类号： H01L21/312 , B05D3/06 , G03F7/00
CPC分类号： G03F7/11 , G03F7/16 , H01L21/312
摘要： After forming a TiN film on a semiconductor substrate, a surface treatment agent in a gas phase, which is obtained by bubbling trimethylsilyl methylsulfonate with a nitrogen gas, is supplied onto the TiN film. The TiN film is then coated with a chemically amplified positive resist including an acid generator and a compound which can attain alkali solubility through the function of an acid, and a pre-bake process is subsequently conducted, thereby forming a resist film. The resist film is then exposed with a KrF excimer laser by using a desired mask. Through this exposure, an acid is generated from the acid generator included in the resist film. Since sulfonic acid produced from trimethylsilyl methylsulfonate weakens the function as a base of a nitrogen atom having a lone pair, the acid generated from the acid generator is not deactivated at the bottom of the resist film. As a result, a resist pattern with a satisfactory shape free from footing can be formed.
摘要翻译： 在半导体衬底上形成TiN膜之后，将通过用氮气鼓泡三甲基甲硅烷基甲磺酸酯获得的气相中的表面处理剂供给到TiN膜上。 然后用包含酸产生剂和能够通过酸的功能获得碱溶解性的化合物的化学放大正性抗蚀剂涂覆TiN膜，随后进行预烘烤工艺，从而形成抗蚀剂膜。 然后通过使用所需的掩模用KrF准分子激光器曝光抗蚀剂膜。 通过该曝光，从抗蚀剂膜中包含的酸发生剂产生酸。 由于由三甲基甲硅烷基甲基磺酸盐生成的磺酸使作为具有单一对的氮原子的碱的功能变弱，所以在酸性发生剂产生的酸在抗蚀剂膜的底部不失活。 结果，可以形成具有令人满意的无基底形状的抗蚀剂图案。
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92.发明公开Method of cleaning semiconductor device and equipment for cleaning semiconductor device 失效一种用于清洁半导体器件，及装置的方法。
公开(公告)号：EP0618612A3
公开(公告)日：1995-01-18
申请号：EP94104530.4
申请日：1994-03-22
IPC分类号： H01L21/306 , H01L21/00 , C23G1/02
CPC分类号： H01L21/02052 , H01L21/67057
摘要： The present invention discloses a cleaning solution used to wash a semiconductor substrate surface. This cleaning solution contains these components: a liquid mixture of sulfuric acid and hydrogen peroxide to remove organic and inorganic residues; fluorosulfuric acid for generation of fluorine which serves as an etchant to remove other residues and particles; and water.
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公开(公告)号：EP0284414B1
公开(公告)日：1994-06-15
申请号：EP88302671.8
申请日：1988-03-25
CPC分类号： G03F7/70241 , G02B1/02 , G02B13/143 , G02B13/24
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94.发明公开Photosensitive resin composition and method for producing fine patterns using the photosensitive resin 失效光敏树脂组合物和使用感光树脂生产精细图案的方法
公开(公告)号：EP0260899A3
公开(公告)日：1989-09-13
申请号：EP87308073.3
申请日：1987-09-11
IPC分类号： G03F7/095
摘要： A photosensitive resin composition is disclosed, comprising a polymer and a diazonium salt whose counter anion is a sulfonic group-containing compound represented by formulae (I) and/or (II):
wherein R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, an alkoxy group, a phenyl group, a halogen atom, a hydroxyl group, or a carboxyl group; X is a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, or an ammonium group; and m and n are each an integer of from 0 to 5, provided that the sum of m and n is not higher than 5,
wherein R and X are the same as defined above, and mʹ and nʹ are each an integer of from 0 to 7, provided that the sum of mʹ and nʹ is not higher than 7. A method for producing fine patterns by use of the foregoing photosensitive resin composition is also disclosed.-
95.发明公开Photosensitive resin composition and method for producing fine patterns using the photosensitive resin 失效用于生产微细结构的与该组合物的感光性树脂组合物和方法。
公开(公告)号：EP0260899A2
公开(公告)日：1988-03-23
申请号：EP87308073.3
申请日：1987-09-11
IPC分类号： G03F7/095
摘要： A photosensitive resin composition is disclosed, comprising a polymer and a diazonium salt whose counter anion is a sulfonic group-containing compound represented by formulae (I) and/or (II):
wherein R is a hydrogen atom, an alkyl group, an aryl group, an aralkyl group, an alkoxy group, a phenyl group, a halogen atom, a hydroxyl group, or a carboxyl group; X is a hydrogen atom, a lithium atom, a sodium atom, a potassium atom, or an ammonium group; and m and n are each an integer of from 0 to 5, provided that the sum of m and n is not higher than 5,
wherein R and X are the same as defined above, and mʹ and nʹ are each an integer of from 0 to 7, provided that the sum of mʹ and nʹ is not higher than 7.
A method for producing fine patterns by use of the foregoing photosensitive resin composition is also disclosed.摘要翻译： 一种光敏树脂组合物盘游离缺失，包含聚合物和重氮盐谁的抗衡阴离子是由式餐饮（I）和/或代表的含磺酸基的化合物（II）：
worin R是氢原子的烷基组 其中的芳基，在烷氧基，苯基，卤原子，羟基，或羧基芳烷基; X是氢原子，锂原子，钠原子，钾原子或铵基团; 并且m和n各自为0至5的整数，条件做的米和n之和不大于5， worin R和X如上述所定义的相同，而m“和n”各自 从0到7的整数，条件做m的总和“和n”因此不高于7.一种方法，用于通过使用上述的光敏树脂组合物的制造精细图案是游离缺失盘。
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