METHOD FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

    公开(公告)号:EP4435516A1

    公开(公告)日:2024-09-25

    申请号:EP24161393.4

    申请日:2024-03-05

    IPC分类号: G03F7/075 G03F7/09 G03F7/11

    CPC分类号: G03F7/094 G03F7/0752 G03F7/11

    摘要: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100°C or higher and 600°C or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

    MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM

    公开(公告)号:EP4428615A1

    公开(公告)日:2024-09-11

    申请号:EP24161082.3

    申请日:2024-03-04

    IPC分类号: G03F7/095 G03F7/11

    CPC分类号: G03F7/095 G03F7/11

    摘要: The present invention is a material for forming an adhesive film for an adhesive film formed directly under a resist upper layer film, includes: (A) a resin having a structural unit containing an acid-dissociable group and having two or more units represented by the formula (1) where R1 represents a hydrogen atom or a methyl group, and R2 represents a group selected from the formulae (1-1) to (1-3); and (C) an organic solvent, and the material comprises (B) a photo-acid generator and/or the resin (A) having the photo-acid generating unit. This provides a material for forming an adhesive film in a fine patterning process by a multilayer resist method, where the material gives an adhesive film with high adhesiveness to a resist upper layer film, suppresses fine pattern collapse, and can form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.