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公开(公告)号：EP1730663A4
公开(公告)日：2012-12-19
申请号：EP05724714
申请日：2005-03-03
发明人： GLEITMAN DANIEL D , RODNEY PAUL F , DUDLEY JAMES H
IPC分类号： G06G7/46 , E21B17/02 , E21B17/07 , E21B28/00 , E21B36/04 , E21B41/00 , E21B47/02 , G06F19/00
摘要： A method and apparatus for providing a local response to a local condition in an oil well are disclosed. A sensor is provided to detect a local condition in a drill string. A controllable element is provided to modulate energy in the drill string. A controller is coupled to the sensor and to the controllable element. The controller receives a signal from the sensor, the signal indicating the presence of said local condition, processes the signal to determine a local energy modulation in the drill string to modify said local condition, and sends a signal to the controllable element to cause the determined local energy modulation.
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公开(公告)号：EP1702284A4
公开(公告)日：2012-09-05
申请号：EP04815505
申请日：2004-12-23
发明人： AKKURT RIDVAN , PROETT MARK
CPC分类号： E21B49/08 , G01N24/081
摘要： Methods and systems are described for estimating of the level of contamination of downhole fluid using physical property measurements, and mathematical modeling of contamination functions and fluid property mixing laws. The proposed approaches enable computation of estimates of the pumping time needed to achieve a certain contamination threshold level.
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13.发明公开
公开(公告)号：EP2021747A4
公开(公告)日：2012-06-27
申请号：EP07750603
申请日：2007-02-12
发明人： BERTHOLD JOHN W , ZHOU TIANSHENG , BUSH IRA JEFFERY , MCNAIR FRED
CPC分类号： G01V1/184 , G01H9/006 , G01P15/093 , G01P15/18 , G01P2015/0837
摘要： The present invention relates to an optic seismic MEMS sensor. More specifically, a proof mass is supported by a frame having supporting beams. The proof mass is positioned within the frame and has a hinged attachment to the beams. The proof mass has a sensor gap having a first reflector and a second reflector positioned at opposing ends of the sensor gap. An optical fiber injects light into the sensor gap and light is reflected to determine seismic movement of the proof mass with respect to the frame. Stops are provided for limiting the movement of the proof mass to minimize strain on the attachment of the beams and the proof mass.
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公开(公告)号：EP2167994A4
公开(公告)日：2012-05-02
申请号：EP07795118
申请日：2007-05-21
发明人： SAN MARTIN LUIS E , DAVIES EVAN L
IPC分类号： G01V3/24
CPC分类号： G01V3/24
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公开(公告)号：EP1687837A4
公开(公告)日：2012-01-18
申请号：EP04817851
申请日：2004-11-18
IPC分类号： H01L21/00 , B81B7/00 , E21B20060101 , E21B7/00 , E21B45/00 , E21B47/00 , G01V20060101 , G01V3/08 , H01L20060101 , H01L21/86 , H01L23/02 , H01L23/31 , H01L27/12 , H01Q20060101
CPC分类号： E21B47/0002 , B81B2207/115 , E21B47/011 , G01V1/40 , H01L21/86 , H01L23/3157 , H01L27/12 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/13091 , H01L2924/3011 , H01L2924/00
摘要： A tool comprising a tool body (26) and tool electronics located within the tool body, wherein the tool electronics (916) are operable to sense a tool component characteristic indicative of tool performance such as temperature, acceleration, pressure, rotation, strain or vibration. At least some of the tool electronics are operable, at least for one week, when exposed to temperatures of at least 200 Celsius. The tool electronics may be integrated circuits formed on a silicon carbide substrate (602, 702) or a silicon on sapphire substrate (602, 702). One illustrative embodiment of the tool is a drill bit for employment in a high temperature drill well.
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公开(公告)号：EP1700003A4
公开(公告)日：2011-09-07
申请号：EP04794910
申请日：2004-10-13
发明人： RODNEY PAUL F , MASINO JAMES E , SCHULTZ ROGER L
CPC分类号： E21B36/003 , E21B47/011 , H01L23/34 , H01L2924/0002 , H05K1/0212 , H01L2924/00
摘要： Methods and systems for operating integrated circuits at temperatures higher than expected ambient temperatures. The heating may be of entire circuit boards, portions of the circuit boards (such as the components within a multiple-chip module) and/or single devices. Methods and related systems may be used in any high temperature environment such as downhole logging tools, and the devices so heated are preferably of silicon on insulator semiconductor technology.
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17.发明公开
公开(公告)号：EP2092560A4
公开(公告)日：2010-12-22
申请号：EP06849954
申请日：2006-12-13
发明人： HRAMETZ ANDY , DUNCAN ALEX
CPC分类号： H05K3/3463 , B23K35/262 , C22C13/00 , C22C13/02 , E21B49/00 , H01L2924/0002 , H05K1/09 , H01L2924/00
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公开(公告)号：EP2052436A4
公开(公告)日：2010-05-19
申请号：EP06803663
申请日：2006-09-15
发明人： KNIZHNIK SERGEY
摘要： Multi-axial antenna system comprising three co-located coils (104, 106, 108) wound around a torroidal-shaped bobbin (102). Each coil generates a magnetic field in a mutually orthogonal direction. The coils are received in respective sets of grooves in the bobbin.
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公开(公告)号：EP1687838A4
公开(公告)日：2009-04-29
申请号：EP04817852
申请日：2004-11-18
发明人： SCHULTZ ROGER L , FREEMAN JAMES J
IPC分类号： H01L21/00 , G11C11/22 , H01L20060101 , H01L21/82 , H01L21/8242 , H01L21/8252 , H01L21/84 , H01L21/86 , H01L27/10 , H01L27/115 , H01L27/12 , H01L27/22
CPC分类号： H01L27/101 , H01L21/8213 , H01L21/8252 , H01L21/84 , H01L21/86 , H01L27/11502 , H01L27/12 , H01L27/228 , H01L2224/16 , H01L2924/13091 , H01L2924/16152 , H01L2924/00
摘要： Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a sapphire or spinel substrate having multiple ferroelectric memory cells disposed upon it. In other embodiments, a high temperature nonvolatile integrated device comprises a silicon on insulator substrate or a large bandgap semiconductor substrate having multiple ferroelectric or magnetic memory cells disposed on it. In yet other embodiments, a high temperature nonvolatile integrated device comprises a sapphire, silicon on insulator, or a large bandgap substrate having programmable read only memory (PROM) cells or electrically erasable PROM (EEPROM) cells disposed on it.
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公开(公告)号：EP1687899A4
公开(公告)日：2008-10-08
申请号：EP04811462
申请日：2004-11-18
IPC分类号： H03K17/615 , G11C19/08 , H01L20060101
CPC分类号： H01L29/78615 , H01L29/6678 , H01L29/78621 , H01L29/78657
摘要： High-voltage transistors, charge pumps, voltage level shifters, and method for fabricating the same are disclosed. The high-voltage transistor includes a substrate that includes sapphire or diamond and an active layer disposed on the substrate. The active layer includes a drain region, a source region, a channel region, and a lightly-doped drain region between the channel region and the drain region.
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