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公开(公告)号：EP0367301A2
公开(公告)日：1990-05-09
申请号：EP89123184.7
申请日：1985-06-21
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
摘要： A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.
摘要翻译： 场驱动型的半导体开关器件包括具有pnp晶体管部分（8）和npn晶体管部分（9）的双极组件，所述pnp晶体管部分（8）和所述npn晶体管部分（9）被连接以使得 正反馈和连接在所述npn晶体管部分（9）的发射极（n3）和集电极（n2）之间的n沟道MOS晶体管（11），其中p沟道MOS晶体管（10）跨越 pnp晶体管部分（8）的发射极（p1）和连接器电极（p2），所述n沟道MOS晶体管（11）的控制端子与所述p沟道MOS晶体管的控制端子 （10）。 所述装置即使处于浮动状态也可操作以控制主驱动部分，并且通过较小的控制电流来驱动主驱动部分。
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公开(公告)号：EP0077072A3
公开(公告)日：1985-05-15
申请号：EP82109430
申请日：1982-10-12
申请人： Hitachi, Ltd.
发明人： Sugawara, Yoshitaka
IPC分类号： H01L29/86
CPC分类号： H01L29/404 , H01L29/8605
摘要： A resistance element capable of withstanding a high voltage is formed through impurity diffusion in a single crystal island (1) of a semiconductor integrated circuit substrate. The resistance element includes a resistive region (2; 16) formed in an exposed surface of the single crystal island (1) and folded reciprocatively by at least one and a half turns in a planar zigzag-like pattern. The pitch at which the resistive region is folded is decreased as viewed in the direction in which extension of depletion layer formed within the single crystal island upon application of a voltage between two ends of the resistive region is decreased.
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