Semiconductor switch circuit
    1.
    发明公开
    Semiconductor switch circuit 失效
    Halbleiterschalter-Schaltung。

    公开(公告)号:EP0367301A2

    公开(公告)日:1990-05-09

    申请号:EP89123184.7

    申请日:1985-06-21

    CPC分类号: H03K17/567

    摘要: A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.

    摘要翻译: 场驱动型的半导体开关器件包括具有pnp晶体管部分(8)和npn晶体管部分(9)的双极组件,所述pnp晶体管部分(8)和所述npn晶体管部分(9)被连接以使得 正反馈和连接在所述npn晶体管部分(9)的发射极(n3)和集电极(n2)之间的n沟道MOS晶体管(11),其中p沟道MOS晶体管(10)跨越 pnp晶体管部分(8)的发射极(p1)和连接器电极(p2),所述n沟道MOS晶体管(11)的控制端子与所述p沟道MOS晶体管的控制端子 (10)。 所述装置即使处于浮动状态也可操作以控制主驱动部分,并且通过较小的控制电流来驱动主驱动部分。

    Semiconductor switch circuit
    2.
    发明公开
    Semiconductor switch circuit 失效
    半导体开关电路

    公开(公告)号:EP0367301A3

    公开(公告)日:1990-05-16

    申请号:EP89123184.7

    申请日:1985-06-21

    CPC分类号: H03K17/567

    摘要: A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.

    Automatic gain control circuit
    6.
    发明公开
    Automatic gain control circuit 有权
    自动增益控制电路

    公开(公告)号:EP2538558A3

    公开(公告)日:2015-06-03

    申请号:EP12004675.0

    申请日:2012-06-21

    IPC分类号: H03G1/00

    CPC分类号: H03G1/0023

    摘要: In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a voltage obtained by adding a voltage with an amplitude 1/2 a desired output amplitude of the variable gain circuit to the average value voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit and outputting a gain control signal to the variable gain circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit.

    Automatic gain control circuit
    7.
    发明公开
    Automatic gain control circuit 有权
    自动增益控制电路

    公开(公告)号:EP2538558A2

    公开(公告)日:2012-12-26

    申请号:EP12004675.0

    申请日:2012-06-21

    IPC分类号: H03G1/00

    CPC分类号: H03G1/0023

    摘要: In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a voltage obtained by adding a voltage with an amplitude 1/2 a desired output amplitude of the variable gain circuit to the average value voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit and outputting a gain control signal to the variable gain circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit.

    摘要翻译: 在自动增益控制电路中,峰值检测电路检测并输出来自可变增益电路的输出信号的峰值电压。 平均值检测/输出幅度设置电路检测来自可变增益电路的输出信号的平均值电压,并且输出通过将具有可变增益电路的期望输出幅度的1/2的电压加到 平均值电压。 放大电路通过放大峰值检测电路和平均值检测/输出幅度设置电路的输出电压之间的差值并将增益控制信号输出到可变增益电路来控制可变增益电路的增益。 峰值检测电路中的路径上的晶体管的基极 - 发射极结点从输入端口接收输出信号,所述输入端口接收来自可变增益电路的输出信号到向放大电路输出电压的输出端口,其数量等于基极 - 发射极 在平均值检测/输出幅度设置电路的路径上的晶体管从接收来自可变增益电路的输出信号的输入端口到将电压输出到放大电路的输出端口的晶体管结。