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27 条记录 (耗时 0.02 秒)

    Semiconductor device comprising an aggregate of semiconductor micro-needles
    24.
    发明公开
    Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
    半导体器件包括半导体微针集合体

    公开(公告)号：EP0892444A2

    公开(公告)日：1999-01-20

    申请号：EP98119142.2

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    发明人： Eriguchi, Kofi ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter. are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后形成由硅制成的半球形晶粒，每个晶粒都具有极小的直径。 通过LPCVD沉积在其上。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二虚线掩模用于将硅衬底从其表面蚀刻到特定深度，从而形成半导体微针集合体。 由于每个半导体微针的直径足够小以引起量子尺寸效应以及仅具有小尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针集合体（量子化区域），可以构成具有高信息处理功能的半导体装置。

    Semiconductor device comprising an aggregate of semiconductor micro-needles
    25.
    发明公开
    Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
    半导体器件包括半导体微针集合体

    公开(公告)号：EP0887867A2

    公开(公告)日：1998-12-30

    申请号：EP98119141.4

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    发明人： Eriguchi, Kofi ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球形晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二虚线掩模用于将硅衬底从其表面蚀刻到特定深度，从而形成半导体微针集合体。 由于每个半导体微针的直径足够小以引起量子尺寸效应以及仅具有小尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针集合体（量子化区域），可以构成具有高信息处理功能的半导体装置。

    Semiconductor device comprising an aggregate of semiconductor micro-needles
    26.
    发明公开
    Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
    Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

    公开(公告)号：EP0887866A2

    公开(公告)日：1998-12-30

    申请号：EP98119140.6

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    发明人： Eriguchi, Kofi ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
    27.
    发明公开
    Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same 失效
    半导体微针及其制造方法和半导体器件及其制造方法的聚集体。

    公开(公告)号：EP0652600A1

    公开(公告)日：1995-05-10

    申请号：EP94117295.9

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Eriguchi, Koji ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate (1) is formed a silicon dioxide film (5) and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD (6). After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底（1）是二氧化硅膜（5）形成，然后由硅制成的半球形晶粒，其各自具有在非常小的直径，通过LPCVD沉积于其上（6）。 退火半球形晶粒之后，将二氧化硅膜是使用蚀刻作为第一虚线掩模半球形晶粒，从而形成二氧化硅成膜的组成的第二虚线掩模。 将所得的第二虚线掩模被用于蚀刻硅衬底，以从其表面特定深度，从而形成上半导体微针的聚集体。 由于每个半导体微针的直径足够小，以使量子尺寸效应以及仅具有小的尺寸变化，显着的量子晶粒尺寸效应可以得到。 因此，变得可以通过使用半导体微针的集合体（量化区），以构成具有高信息处理功能的半导体装置。