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    Method for fabricating semiconductor device
    1.
    发明公开
    Method for fabricating semiconductor device 审中-公开
    Verfahrenfürdas Herstellen eines Halbleiterbauelements

    公开(公告)号：EP1416525A2

    公开(公告)日：2004-05-06

    申请号：EP03024948.6

    申请日：2003-10-29

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Kubota, Masafumi ,  Hayashi, Shigenori

    IPC分类号： H01L21/316

    CPC分类号： H01L21/28194 ,  H01L21/268 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/324 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250°C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

    摘要翻译： 通过在基板（11）上形成高电介质绝缘膜（13）来制造半导体器件; 并将光照射到其上形成有绝缘膜的基板上。

    Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles
    5.
    发明公开
    Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles 失效
    一种用于制造半导体材料的微针的集合体及其制造具有这种聚集体的半导体器件的方法的工艺

    公开(公告)号：EP0892446A3

    公开(公告)日：1999-05-06

    申请号：EP98119145.5

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Eriguchi, Kofi ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter. are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底（1）是二氧化硅膜（5）形成，然后由硅制成的半球形晶粒，其各自具有在非常小的直径，通过LPCVD沉积于其上（6）。 退火半球形晶粒之后，将二氧化硅膜是使用蚀刻作为第一虚线掩模半球形晶粒，从而形成二氧化硅成膜的组成的第二虚线掩模。 将所得的第二虚线掩模被用于蚀刻硅衬底，以从其表面特定深度，从而形成上半导体微针的聚集体。 由于每个半导体微针的直径足够小，以使量子尺寸效应以及仅具有小的尺寸变化，显着的量子晶粒尺寸效应可以得到。 因此，变得可以通过使用半导体微针的集合体（量化区），以构成具有高信息处理功能的半导体装置。

    Semiconductor device comprising an aggregate of semiconductor micro-needles
    6.
    发明公开
    Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
    Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial

    公开(公告)号：EP0887867A3

    公开(公告)日：1999-05-06

    申请号：EP98119141.4

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    发明人： Eriguchi, Kofi ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底（1）上形成二氧化硅膜（5），然后通过LPCVD（6）在其上沉积各自具有极小直径的由硅制成的半球状晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模来蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二点阵掩模用于将硅衬底从其表面蚀刻到指定的深度，从而形成半导体微针的聚集体。 由于每个半导体微针的直径足够小以致量子尺寸效应以及仅具有小的尺寸变化，因此可获得显着的量子尺寸效应。 因此，通过使用半导体微针的集合体（量化区域），可以构成具有高信息处理功能的半导体装置。

    Semiconductor device comprising an aggregate of semiconductor micro-needles
    7.
    发明公开
    Semiconductor device comprising an aggregate of semiconductor micro-needles 失效
    半导体器件包括半导体微针集合体

    公开(公告)号：EP0893834A2

    公开(公告)日：1999-01-27

    申请号：EP98119139.8

    申请日：1994-11-02

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD

    发明人： Eriguchi, Kofi ,  Kubota, Masafumi ,  Niwa, Masaaki ,  Nomura, Noboru

    IPC分类号： H01L33/00 ,  H01L21/30 ,  H01L27/15

    CPC分类号： H01L31/1804 ,  B82Y10/00 ,  G02B6/1245 ,  G02B2006/12102 ,  G02B2006/12173 ,  G02B2006/12176 ,  G11C23/00 ,  H01H1/0036 ,  H01L21/3086 ,  H01L31/0352 ,  H01L33/10 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/947 ,  Y10S438/962 ,  Y10S438/964

    摘要： On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second- dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

    摘要翻译： 在硅衬底上形成二氧化硅膜，然后通过LPCVD在其上沉积各自具有极小直径的由硅制成的半球形晶粒。 在半球形晶粒退火之后，使用半球形晶粒作为第一虚线掩模蚀刻二氧化硅膜，由此形成由二氧化硅膜构成的第二虚线掩模。 所得到的第二虚线掩模用于将硅衬底从其表面蚀刻到特定深度，从而形成半导体微针集合体。 由于每个半导体微针的直径足够小以引起量子尺寸效应以及仅具有小尺寸变化，因此可以获得显着的量子尺寸效应。 因此，通过使用半导体微针集合体（量子化区域），可以构成具有高信息处理功能的半导体装置。