摘要:
The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.
摘要:
A solar cell having improved electric energy generation efficiency and a method of manufacturing the solar cell. The solar cell includes a substrate (110), a rear electrode layer (120) on the substrate and comprising a first rear electrode (121) and a second rear electrode (122) spaced from each other, a window electrode layer (150) on the rear electrode layer and comprising a first window electrode (151) electrically coupled to the second rear electrode at a contact region (151c) on the second rear electrode, a light-absorbing layer (130) between the rear electrode layer and the window electrode layer, and an insulating layer (160a) on a first portion of the second rear electrode, wherein the first portion is between an edge of the second rear electrode facing the first rear electrode and the contact region.
摘要:
The present invention relates to a thin-film photovoltaic module with hydrophobic rear-side coating, at least comprising: - a substrate (1) (soda-lime glass), wherein at least one hydrophobic coating (5) (containing an alkylsilane, preferably a fluorinated alkylsilane) is arranged on the rear side (IV) of the substrate (1), - a photovoltaic layer structure (2) on the front side (III) of the substrate (1) and - a covering screen (3), which is areally connected to the front side (III) of the substrate (1) via the rear side (II) of said screen with at least one intermediate layer (4).
摘要:
A solar cell includes a substrate; a back electrode layer formed on the substrate; a light absorbing layer formed on the back electrode layer; an alloy layer formed on a surface of the back electrode layer between the back electrode layer and the light absorbing layer; a buffer layer formed on the light absorbing layer; a first through-hole that exposes at least one portion of the substrate by passing through the buffer layer and the back electrode layer; and an insulating barrier formed to cover at least a portion in the first through-hole.
摘要:
A solar cell structure has a solar cell unit structure including a heat sink, and a solar cell having a front side, a back side, and a solar-cell projected area coverage on the heat sink. The solar cell has an active semiconductor structure that produces a voltage between the front side and the back side when the front side is illuminated. An intermediate structure is disposed between and joined to the back side of the solar cell and to the heat sink. The intermediate structure has an intermediate-structure projected area coverage on the heat sink and includes a by-pass diode having a diode projected area coverage on the heat sink. The diode projected area coverage on the heat sink may be substantially the same as the intermediate-structure projected coverage on the heat sink. Alternatively, the diode projected area coverage on the heat sink maybe less than the solar-cell projected area coverage on the heat sink, and the intermediate structure further includes a substrate coplanar with the by-pass diode.
摘要:
A solar cell includes a semiconductor substrate and a sequence of semiconductor layers disposed over the substrate including a window layer. The solar cell also includes a semiconductor silicon-containing cap layer over the window layer. The cap layer is spatially separated from the window layer by a semiconductor barrier layer that either includes no silicon or has a silicon concentration that is significantly lower than the silicon concentration of the cap layer.