公开(公告)号：EP1892313A1

公开(公告)日：2008-02-27

申请号：EP06747170.6

申请日：2006-06-05

Applicant: OSAKA Titanium Technologies Co., Ltd.

Inventor： NATSUME, Yoshitake, Osaka Titanium technologies Co Ltd

IPC: C23C14/24 ,  G02F1/1333 ,  G09F9/30

CPC classification number: C23C14/10 ,  C01B33/113 ,  C04B35/14 ,  C04B2235/428 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2235/80 ,  C04B2235/96 ,  C23C14/24

Abstract: In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000°C to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2θ = 28 ° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2 ≤ 3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.

Abstract translation: 在用于形成一氧化硅蒸发膜的粉末烧结型一氧化硅基蒸发材料中，抑制了飞溅的产生。 确保能抵抗材料使用的材料强度。 为了实现这些，在700〜1000℃下烧结由SiO析出的起始粉末，形成蒸发材料。 在烧结工序中抑制Si的析出。 在通过XRD的测量中，在峰值点附近产生的在2θ= 28°附近产生的Si峰值处的峰值强度P1和从峰值点之前的平均强度梯度预期的峰值点处的基极强度P2满足以下：P1 / P2‰3.通过选择性使用由真空冷凝机生产的沉淀SiO，将材料烧结后的蒸发材料的压缩断裂强度提高至5MPa以上。