摘要:
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
摘要:
La présente invention concerne un matériau multi-couches (1) comprenant : (i) un assemblage de couches, dites « couches avant » (100), apte à former une cellule photovoltaïque avant et (ii) un assemblage de couches, dites « couches arrière » (400), apte à former une cellule photovoltaïque arrière, dans lequel l'assemblage de couches avant (100) et l'assemblage de couches arrière (400) sont isolés électriquement par une couche isolante (30) de matériau épitaxié.
摘要:
A photovoltaic device comprising: a plurality of photovoltaic cells, distant from one another; a holder (6) receiving the cells; and a light guide (10) making contact with said cells and comprising a primary guide (18) having a face (22) that is proximal to the cells, the proximal face (22) being oriented toward the cells (8) and the holder (6). The photovoltaic device comprises, between the cells, zones located between the holder and the primary guide and containing a material (24) of refractive index lower than that of the proximal face, the material making contact with said proximal face.