摘要:
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
摘要:
The invention concerns a method for producing an imaging device comprising at least a pixel matrix made of a photon-sensing semiconductor material (43) deposited on a substrate incorporating electronic devices and having metallic surfaces (42), wherein, prior to depositing the semiconductor material (43) on said substrate, a material designed to promote adherence of the semiconductor material is deposited solely on the metallic surfaces (42) of said substrate.