公开(公告)号：EP0063216A2

公开(公告)日：1982-10-27

申请号：EP82101179.8

申请日：1982-02-17

申请人： International Business Machines Corporation

发明人： Chappell, Barbara Alane ,  Schuster, Stanley Everett

IPC分类号： G11C8/00

CPC分类号： G11C8/08

摘要： An FET high performance driver circuit (20) is especially effective in an environment wherein both large input and output capacitive loads are present. The driver includes a push-pull output circuit (30, 40), a clocked load (25), and a switched transfer depletion FET (27) adapted to decouple the large input capacitive load (62) from an internal node (80) of the driver circuit. This switched decoupling allows an isolation of the large input capacitance from the internal node, whereby the internal node potential can be raised rapidly, and the bootstrapping effectiveness at the internal node can be enhanced so as to significantly increase the circuit operating speed in driving large output capacitative load.