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公开(公告)号：EP0843345A3
公开(公告)日：1998-07-08
申请号：EP97309195.2
申请日：1997-11-14
IPC分类号： H01L21/20
CPC分类号： H01L21/76259 , H01L2924/0002 , Y10S438/928 , Y10S438/96 , Y10S438/977 , H01L2924/00
摘要： A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
摘要翻译： 一种制造半导体产品的方法包括以下步骤：通过扩散能够控制导电类型的元素，至少在硅衬底的一个侧面的表面上形成扩散区，在包括扩散的区域中形成多孔硅层 通过在多孔硅层上形成无孔半导体层来制备第一衬底，将第一衬底和第二衬底键合在一起以产生多孔结构，其中无孔半导体层位于内部，将多层结构沿着多孔硅层分开但是 不沿着扩散区域并去除残留在分离的第二基板上的多孔硅层。
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公开(公告)号：EP0843345A2
公开(公告)日：1998-05-20
申请号：EP97309195.2
申请日：1997-11-14
IPC分类号： H01L21/20
CPC分类号： H01L21/76259 , H01L2924/0002 , Y10S438/928 , Y10S438/96 , Y10S438/977 , H01L2924/00
摘要： A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
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公开(公告)号：EP1482353B1
公开(公告)日：2005-12-28
申请号：EP04017005.2
申请日：2002-01-30
IPC分类号： G02F1/1362
CPC分类号： G02F1/13454 , G02F1/136277 , G02F2202/105 , G02F2203/01
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44.发明公开Semiconductor substrate, method of manufacturing the same, and bonded substrate stack surface shape measuring method 审中-公开半导体衬底及其制造方法，和方法，用于测量键合衬底叠层的表面结构
公开(公告)号：EP1202339A3
公开(公告)日：2005-11-09
申请号：EP01309005.5
申请日：2001-10-24
发明人： Sakaguchi, Kiyofumi
IPC分类号： H01L21/762
CPC分类号： H01L21/6835 , H01L21/76259 , H01L2221/68359 , H01L2221/68363 , H01L2924/30105
摘要： A semiconductor substrate having a managed surface shape is manufactured. In a method of manufacturing a semiconductor substrate by bonding a device substrate (1) to a handle substrate (5), the surface shape of the handle substrate on the bonding side is nearly equal to that of the resultant semiconductor substrate. In a surface shape measuring method for a bonded substrate stack manufactured by bonding a first substrate and a second substrate via an insulating layer, a pseudo bonded substrate stack is manufactured by bonding the first and second substrates without sandwiching any insulating layer, the surface shape of the pseudo bonded substrate stack is measured, and the measurement value is regarded as the surface shape of the bonded substrate stack.
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45.发明公开Production method of photoelectric conversion device, and photoelectric conversion device produced by the method 审中-公开这样制备的光电转换装置和光电转换装置的制造方法
公开(公告)号：EP1054458A3
公开(公告)日：2004-12-22
申请号：EP00110765.5
申请日：2000-05-19
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/052
CPC分类号： H01L31/1892 , H01L31/0236 , H01L31/02363 , H01L31/056 , H01L31/1804 , H01L31/184 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.
摘要翻译： 本发明提供一种光电转换装置，其包括一个基板的表面上，提供分离层，保持在基板上的凹凸形状，形成了半导体的工序的一个步骤上形成上不均匀形状的步骤的制造方法 电影保持分离层上不均匀形状，在分离层使半导体膜-从基板分离，worin基板的表面上形成不均匀形状的步骤的步骤是形成具有凹凸的衬底的步骤 形状通过与分离后保留的分离层的衬底的各向异性蚀刻的表面上。 本发明因此提供了通过上述方法制造的光电转换装置。
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46.发明公开Method of preparing semiconductor member using an etching solution 失效Verfahren zur Vorbereitung einer Halbleitervorrichtung unter Verwendung derÄtzlösung
公开(公告)号：EP1347505A3
公开(公告)日：2004-10-20
申请号：EP03076425.2
申请日：1992-02-14
IPC分类号： H01L21/306 , H01L21/20 , H01L21/768
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/30604 , H01L21/76251
摘要： A method for preparing a semiconductor member, which method comprises: providing a first substrate having a porous monocrystalline silicon layer (11) and a non-porous monocrystalline silicon layer (12); bonding the first substrate to a second light-transmissive substrate so that the non-porous monocrystalline silicon layer (12) forms an inner layer of the resulting multi-layer structure; and chemically etching the porous monocrystalline silicon layer using a chemical etching liquid comprising hydrofluoric acid to remove the porous monocrystalline silicon layer from the multilayer structure. The chemical etching liquid is a solution selected from one of the following: a) hydrofluoric acid and hydrogen peroxide; or b) hydrofluoric acid, hydrogen peroxide and an alcohol; or c) buffered hydrofluoric acid and hydrogen peroxide; or d) buffered hydrofluoric acid, hydrogen peroxide and an alcohol.
摘要翻译： 一种制备半导体部件的方法包括：形成具有无孔硅单晶层和多孔硅层的衬底; 将具有由绝缘材料制成的表面的另一衬底结合到所述单晶层的表面; 并通过浸入蚀刻溶液中蚀刻去除多孔硅层。
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公开(公告)号：EP1434254A2
公开(公告)日：2004-06-30
申请号：EP03029174.4
申请日：2003-12-18
发明人： Tsuboi, Takashi , Yamagata, Kenji , Sakaguchi, Kiyofumi , Yanagita, Kazutaka , Sugai, Takashi , Takanashi, Kazuhito
IPC分类号： H01L21/00 , H01L21/306 , C30B25/02
CPC分类号： H01L21/6715 , C30B33/00 , H01L21/2007 , H01L21/67051 , H01L21/76259
摘要： Openings are formed at the bottom of an anodizing container. A shower-type current path forming mechanism is arranged at the lower portion of the anodizing container. The mechanism has a pressure vessel. A shower head is arranged at the upper portion of the pressure vessel. A conductive solution in a shower form is injected or discharged from the shower head to form a liquid electrode under the lower surface of a substrate. Accordingly, a current flows between a cathode and an anode to anodize the substrate. The apparatus also has a mechanism which makes a chemical solution overflow from a chemical solution container to form a flow of the chemical solution near the lower surface of the substrate.
摘要翻译： 开口形成在阳极氧化容器的底部。 淋浴型电流路径形成机构设置在阳极氧化容器的下部。 该机构具有压力容器。 喷头位于压力容器的上部。 喷淋形式的导电溶液从喷头喷射或排出，以在基底的下表面下方形成液体电极。 因此，电流在阴极和阳极之间流动以阳极氧化衬底。 该装置还具有使化学溶液从化学溶液容器溢出以在基底的下表面附近形成化学溶液的流动的机构。
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公开(公告)号：EP0843346B1
公开(公告)日：2004-05-06
申请号：EP97309196.0
申请日：1997-11-14
IPC分类号： H01L21/20
CPC分类号： H01L21/304 , H01L21/76259
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49.发明公开Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method 审中-公开复合部件和相关的分离方法，键合衬底叠层和相关联的分离方法，用于转移层转移方法，和SOI衬底的制造方法
公开(公告)号：EP1026729A3
公开(公告)日：2004-04-21
申请号：EP00300724.2
申请日：2000-01-31
IPC分类号： H01L21/762
CPC分类号： H01L21/76259 , H01L21/76251 , H01L2223/54493
摘要： A bonded substrate stack formed by bonding first and second substrates is appropriately separated. A first substrate (10) having a porous layer inside and a single-crystal Si layer and insulating layer on the porous layer is brought into tight contact with a second substrate while shifting their central positions to prepare a bonded substrate stack (30) having a projecting portion at which the outer peripheral edge of the first substrate (10) projects outside that of the second substrate (20). First, a fluid is ejected to the projecting portion to form a separation start portion (40), and then, separation is started from the separation start portion (40) while rotating the bonded substrate stack (30).
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公开(公告)号：EP1398829A2
公开(公告)日：2004-03-17
申请号：EP03020005.9
申请日：2003-09-03
发明人： Sakaguchi, Kiyofumi
IPC分类号： H01L21/762
CPC分类号： H01L21/76259 , H01L21/76254 , Y10S438/907
摘要： There is provided a method of manufacturing a substrate which has a partial insulating layer under a semiconductor layer. After the first substrate (10c) is formed, it is bonded to the second substrate (20), thereby forming a bonded substrate stack (30). Then, the bonded substrate stack (30) is split at a separation layer (15). In the step of forming the first substrate (10c), a partial insulating layer (12a) is formed on the substrate, a single-crystal Si layer (13) is grown in the partial insulating layer (12a), and a polysilicon layer (14) is grown on the partial insulating layer (12a). After that, ions are implanted into the substrate, thereby forming the separation layer (15) inside the substrate.
摘要翻译： 提供一种在半导体层下面具有部分绝缘层的衬底的制造方法。 在形成第一基板（10c）之后，将其接合到第二基板（20），从而形成键合衬底叠层（30）。 然后，键合衬底叠层（30）在分离层（15）处分裂。 在形成第一基板（10c）的步骤中，在基板上形成部分绝缘层（12a），在部分绝缘层（12a）中生长单晶Si层（13），并且形成多晶硅层 14）生长在部分绝缘层（12a）上。 之后，将离子注入基板，从而在基板内形成分离层（15）。
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