摘要:
This invention is to provide a processing system suitable for manufacturing an SOI substrate. The processing system (6000) includes an inverting apparatus (6130), centering apparatus (6120), cleaning/drying apparatus (6110), loader (6070), first unloader (6080), second unloader (6090), third unloader (6100), and separating apparatus (6020). The processing system (6000) also has a conveyor mechanism which linearly moves a robot hand (6152) along a horizontal driving shaft (6160) in a horizontal plane and pivots the robot hand about a pivot shaft (6151), and moves the robot hand (6152) close to or away from the pivot shaft (6151) to convey a bonded substrate stack (50) or separated substrate among the plurality of processing apparatuses. The plurality of processing apparatuses are disposed at positions where the conveyor mechanism can transfer a bonded substrate stack or separated substrate.
摘要:
This invention provides a method of manufacturing a thin-film semiconductor device by a smaller number of processes with reduced influence on a device formation layer at the time of separation. This manufacturing method includes the step of preparing a member having, on a separation layer, a semiconductor film having a semiconductor element and/or semiconductor integrated circuit, the step of forming kerfs from the semiconductor film side of the member, and the separation step of, after the kerf formation step, separating a desired region of the semiconductor element and/or semiconductor integrated circuit from the member.
摘要:
This invention is to provide a technique of separating bonded substrate stacks having porous layers at a high yield. A separating apparatus (100) has a pair of substrate holding portions (270, 280). A bonded substrate stack (50) is sandwiched from upper and lower sides and horizontally held by the substrate holding portions (270, 280) and rotated. A jet is ejected from a nozzle (260) and injected into the porous layer of the bonded substrate stack (50), thereby separating the bonded substrate stack (50) into two substrates at the porous layer. Another separating apparatus (5000) has a pair of substrate holding portions (270, 280), a nozzle (260) of rejecting a fluid to the porous layer of a bonded substrate stack (50), and an abrupt operation prevention mechanism (4000) for preventing the lower substrate holding portion (280) from abruptly moving downward but allowing it to moderately move when separating the bonded substrate stack (50).
摘要:
A porous layer having a multilayered structure is formed. An Si substrate (102) to be processed is anodized in a first electrolytic solution (141, 151) while being held between an anode (106) and a cathode (104) in an anodizing bath (101). The first electrolytic solution (141, 151) is exchanged with a second electrolytic solution (142, 152). The Si substrate (102) is anodized again, thereby forming a porous layer having a multilayered structure on the Si substrate (102).
摘要:
This invention is to support a plate member such as a bonded substrate stack in a horizontal state without coming into contact with one surface of the member and also to efficiently progress separation. Separation is executed while arranging a bonded substrate stack (50) generated by bonding a seed substrate (10) to a handle substrate (20) such that the seed substrate (10) remains on the lower side. At the first stage, the peripheral portion is separated while causing a first substrate support section (101) to chuck and support the central portion of the lower surface of the bonded substrate stack (50). Then, at the second stage, the central portion is separated while causing a second substrate support section (102) to support the lower peripheral portion and side of the bonded substrate stack (50).