公开(公告)号：EP2756532A1

公开(公告)日：2014-07-23

申请号：EP12753770.2

申请日：2012-07-30

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： BENWADIH, Mohammed

IPC分类号： H01L51/05

CPC分类号： H01L51/0529 ,  H01L51/0001 ,  H01L51/0541

摘要： This field-effect transistor (1) comprises at least one lower substrate (2) on which substrate the following are deposited: two electrodes (3, 4), respectively a source electrode (3) and a drain electrode (4); a dielectric layer (6) made of a dielectric material; and a gate electrode (7), the latter being deposited on the dielectric layer (6). It comprises an intermediate layer (10) made of a material comprising molecules having a dipolar moment meeting particular orientation criteria, this layer being deposited between the gate electrode (7) and the dielectric layer (6), said intermediate layer (10) at least extending under the entire area occupied by the gate electrode (7), this intermediate layer being made of an organic compound at least having a tie layer function for the gate electrode (7).

摘要翻译： 该场效应晶体管（1）包括至少一个下基板（2），在基板上沉积有以下基板：两个电极（3,4），分别为源电极（3）和漏电极（4）; 由介电材料制成的介电层（6） 和栅电极（7），后者沉积在介电层（6）上。 它包括由包括具有符合特定取向标准的偶极矩的分子的材料制成的中间层（10），该层沉积在栅电极（7）和介电层（6）之间，所述中间层（10）至少 在由栅电极（7）占据的整个区域下延伸，该中间层由至少具有用于栅电极（7）的连接层功能的有机化合物制成。

公开(公告)号：EP2756531A1

公开(公告)日：2014-07-23

申请号：EP12732691.6

申请日：2012-06-11

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： BENWADIH, Mohammed

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0512 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0558

摘要： This organic transistor (1) comprises at least a lower substrate of plastic material (2), two electrodes (3, 4), respectively a source electrode (3) and a drain electrode (4), deposited on the plastic substrate (2), a semi-conducting layer (5) made of an organic semi-conductor material deposited on the electrodes (3, 4) and the plastic substrate (2), a dielectric layer (6) deposited on the semi-conducting layer (5), and a grid electrode formed on said dielectric layer (6). It further comprises a porous layer (9) between the plastic substrate (2) and the semi-conducting layer (5), wherein said porous layer (9) is situated at least between the source (3) and drain (4) electrodes in order to lower the dielectric constant of the surface of the plastic substrate (2).

摘要翻译： 该有机晶体管（1）至少包括塑料材料（2）的下基板，沉积在塑料基板（2）上的两个电极（3,4），分别为源电极（3）和漏电极（4） ，由沉积在电极（3,4）和塑料衬底（2）上的有机半导体材料制成的半导体层（5），沉积在半导体层（5）上的介电层（6） 以及形成在所述介电层（6）上的栅极。 它进一步包括在塑料衬底（2）和半导体层（5）之间的多孔层（9），其中所述多孔层（9）至少位于电极（3）和漏极（4）之间 为了降低塑料基板（2）表面的介电常数。

公开(公告)号：EP2705551A1

公开(公告)日：2014-03-12

申请号：EP12720647.2

申请日：2012-04-23

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： BENWADIH, Mohammed

IPC分类号： H01L51/00

CPC分类号： H01L51/0012 ,  H01L21/02356 ,  H01L51/0003 ,  H01L51/0558

摘要： Method for the oriented crystallization of materials. The present invention relates to a method useful for orienting the crystallization of a material over a surface zone of at least one face of a substrate, comprising at least the steps consisting in: i. determining, on said face, the surface over which the crystalline deposit must be formed, referred to as the zone of interest, ii. depositing, on said face and at the periphery of said zone of interest, at least one particle dedicated to forming a crystallization nucleus, iii. bringing said particle into contact with at least said material to be crystallized, iv. exposing at least said point of contact between said particle and said material to be crystallized to conditions favourable to the crystallization of said material, said method being characterized in that the surface of said particle is partly functionalized by at least one group having an affinity for said material to be crystallized, said group possessing at least one unit having a chemical nature identical or similar to at least one portion of the chemical structure of said material to be crystallized, and in that said particle is deposited in step ii. so as to expose said group opposite the face to be crystallized.