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    ORGANIC SEMICONDUCTOR FILM PRODUCTION DEVICE
    1.
    发明公开
    ORGANIC SEMICONDUCTOR FILM PRODUCTION DEVICE 有权

    公开(公告)号：EP3413338A1

    公开(公告)日：2018-12-12

    申请号：EP17747154.7

    申请日：2017-01-11

    Applicant: Fujifilm Corporation ,  THE UNIVERSITY OF TOKYO

    Inventor： NAKAMURA Seigo ,  MAEHARA Yoshiki ,  ITAI Yuichiro ,  USAMI Yoshihisa ,  TAKEYA Junichi

    IPC: H01L21/368 ,  H01L21/336 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40

    CPC classification number: B05C11/045 ,  H01L29/786 ,  H01L51/0003 ,  H01L51/05 ,  H01L51/0512 ,  H01L51/105

    Abstract: There is provided a manufacturing device of an organic semiconductor film for manufacturing an organic semiconductor film by using an organic semiconductor solution. The manufacturing device includes a coating member that is disposed to face a surface of a substrate to be spaced therefrom for forming the organic semiconductor film and forms a liquid reservoir of the organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the organic semiconductor solution to a portion between the substrate and the coating member; and a cover portion that covers at least a crystal growth portion of the organic semiconductor solution. The cover portion includes a guide to which an evaporated solvent of the organic semiconductor solution is deposited and which guides a deposit formed of the evaporated solvent of the organic semiconductor solution to a film-unformed region of the organic semiconductor film. While the organic semiconductor solution is supplied to a portion between the coating member and the surface of the substrate by the supply portion, the coating member is moved in a first direction parallel to the surface of the substrate in a state of being in contact with the organic semiconductor solution, to form the organic semiconductor film with the crystal growth portion as a starting point.

    Method of manufacturing an organic field effect transistor
    7.
    发明授权
    Method of manufacturing an organic field effect transistor 有权
    制造有机场效应晶体管的方法

    公开(公告)号：EP2784839B1

    公开(公告)日：2017-10-25

    申请号：EP13161158.4

    申请日：2013-03-26

    Applicant: Novaled GmbH ,  Technische Universität Dresden

    Inventor： Kleemann, Hans ,  Zakhidov, Alexander ,  Lüssem, Björn ,  Leo, Karl

    IPC: H01L51/40

    CPC classification number: H01L51/0018 ,  H01L51/0015 ,  H01L51/0016 ,  H01L51/0023 ,  H01L51/0512 ,  H01L51/102 ,  H01L51/44 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

    Abstract: The present disclosure relates to a method of manufacturing an organic electronic device, comprising providing a layered device structure, the layered device structure comprising a plurality of electrodes and an electronically active region being provided in electrical contact with at least one of the plurality of electrodes, said providing of the layered device structure comprising steps of providing an organic semiconducting layer, applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material, applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region, depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided. ( Fig. 1e )

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