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71.发明公开Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films 失效用于增加气体分离和电介质膜的PECVD的入口管道和方法
公开(公告)号：EP0303508A3
公开(公告)日：1990-01-10
申请号：EP88307501.2
申请日：1988-08-12
发明人： Chang, Mei , White, John M. , Wang, David Nin-Kou , Maydan, Dan
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/455 , C23C16/5096
摘要： An inlet gas manifold (11) for a vacuum deposition chamber (10) incorporates inlet apertures (31) which increase in diameter or cross-section transverse to the direction of gas flow (22). The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia The inlet manifold (11) containing the increasing-diameter gas inlet holes (31) provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.
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72.发明公开Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films 失效输入分离器和用于增加气体离解和PECVD电介质薄膜的方法。
公开(公告)号：EP0303508A2
公开(公告)日：1989-02-15
申请号：EP88307501.2
申请日：1988-08-12
发明人： Chang, Mei , White, John M. , Wang, David Nin-Kou , Maydan, Dan
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/455 , C23C16/5096
摘要： An inlet gas manifold (11) for a vacuum deposition chamber (10) incorporates inlet apertures (31) which increase in diameter or cross-section transverse to the direction of gas flow (22). The aperture configuration increases the dissociation gases such as nitrogen and, thus increases the rate of silicon nitride deposition provided by nitrogen gas chemistry, without requiring the use of reactants such as ammonia. While one could use ammonia in the deposition gas chemistry if desired, the process provides the option of completely eliminating ammonia The inlet manifold (11) containing the increasing-diameter gas inlet holes (31) provides enhanced control of the process and the deposited film, and is also useful for forming other dielectrics such as silicon oxide and silicon oxynitride. In particular, silicon oxynitride films are characterized by low hydrogen content and by compositional uniformity.
摘要翻译： 入口气体歧管（11），用于真空沉积室（10）包括入口孔（31）的直径或横截面的横向增加对气流（22）的方向。 孔结构增加了离解气体：如氮气和，从而增加由氮气提供化学氮化硅沉积速率，而不需要使用的反应物：如氨。 虽然人们可以在沉积气体化学物质如果需要清除使用氨，该方法提供的完全呼叫消除氨的进气歧管（11），其含有增加直径气体入口孔（31）提供的过程和所沉积的电影的增强控制的选项， 并因此用于形成其他电介质有用：诸如氧化硅和氮氧化硅。 特别地，氮氧化硅膜是通过低氢含量，并通过组成均匀性为特征的。
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