公开(公告)号：EP4396393A1

公开(公告)日：2024-07-10

申请号：EP22865251.7

申请日：2022-07-07

申请人： Entegris, Inc.

发明人： KIM, YoonHae ,  CHO, Sungsil ,  KIM, HwanSoo ,  PARK, KieJin

IPC分类号： C23C16/30 ,  C23C16/24 ,  C23C16/455 ,  C07F7/10 ,  C07F7/02

CPC分类号： C01B33/027 ,  C01B33/08 ,  C07F7/10 ,  C07F7/0838 ,  C23C16/401 ,  C23C16/345

公开(公告)号：EP4367709A1

公开(公告)日：2024-05-15

申请号：EP22838286.7

申请日：2022-07-01

申请人： Lam Research Corporation

发明人： KUMAR, Ravi ,  AGARWAL, Pulkit ,  LAVOIE, Adrien ,  AUSTIN, Dustin Zachary ,  ABEL, Joseph R. ,  AGNEW, Douglas Walter ,  BAKER, Jonathan Grant

IPC分类号： H01L21/02 ,  H01L21/768 ,  C23C16/455 ,  C23C16/04 ,  C23C16/505 ,  C23C16/30 ,  C23C16/56

CPC分类号： H01L21/02274 ,  H01L21/0228 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  C23C16/401 ,  C23C16/345 ,  C23C16/045 ,  C23C16/45542 ,  C23C16/45561

公开(公告)号：EP3420116A1

公开(公告)日：2019-01-02

申请号：EP17707518.1

申请日：2017-02-23

申请人： Wacker Chemie AG

发明人： PEDRON, Simon

IPC分类号： C23C16/24 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/442

CPC分类号： C23C16/4404 ,  B01J8/1872 ,  B01J19/02 ,  B01J2219/0218 ,  C01B33/03 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/442

公开(公告)号：EP3390409A1

公开(公告)日：2018-10-24

申请号：EP16822354.3

申请日：2016-12-16

申请人： Dow Silicones Corporation

发明人： REKKEN, Brian D. ,  ZHOU, Xiaobing ,  HWANG, Byung K. ,  KETOLA, Barry

IPC分类号： C07F7/02 ,  C07F7/20 ,  H01L21/02

CPC分类号： C07F7/10 ,  C07F7/0803 ,  C07F7/20 ,  C23C16/345

摘要： The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RR1N—(SixH2x+1) with an amine compound of general formula R2R3NH to produce the silanylamine compound of general formula R2mR3n-N(SixH2+1)3-m-n.

公开(公告)号：EP3330404A3

公开(公告)日：2018-09-12

申请号：EP18151101.5

申请日：2012-06-01

申请人： Versum Materials US, LLC

发明人： XIAO, Manchao ,  LEI, Xinjian ,  PEARLSTEIN, Ronald Martin ,  CHANDRA, Haripin ,  KARWACKI, JR., Eugene Joseph ,  HAN, Bing ,  O'NEILL, Mark Leonard

IPC分类号： C23C16/30 ,  C07F7/00 ,  C07F7/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C07F7/10 ,  C07F7/18

CPC分类号： H01L21/02211 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C09D7/63 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/0228

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R 5 Si(NR 3 R 4 ) x H 3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R 6 Si(OR 7 ) x H 3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R 8 N(SiR 9 (NR 10 R 11 )H) 2 ; an organoaminosilane having a formula of R 8 N(SiR 9 LH) 2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR 1 R 2 )H 3 . Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).

公开(公告)号：EP3020850B1

公开(公告)日：2018-08-29

申请号：EP15199821.8

申请日：2010-07-08

申请人： Aixtron SE

发明人： Savas, Stephen Edward ,  Galewski, Carl ,  Wiesnoski, Allan B. ,  Mantripragada, Sai ,  Joh, Sooyun

IPC分类号： C23F1/00 ,  H05H1/24 ,  B05D1/36 ,  C23C16/26 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  H01J37/32 ,  H01L21/67 ,  C23C16/46 ,  C23C16/54 ,  C23C16/505

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/26 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/466 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/545 ,  H01J37/32036 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069

摘要： Apparatus for plasma processing of a substrate comprising: a power supply; at least one plasma generating unit (PGU) including at least two electrodes, including at least a first electrode and a second electrode, wherein the first electrode is a powered electrode coupled to the power supply; a support for positioning and supporting the substrate with a first side of the substrate facing the PGU. The apparatus further comprising at least one gas supply system and at least one exhaust port configured to provide a gas flow through a first gap between a front surface of the first electrode and the substrate and through a second gap between a first side surface of the first electrode and a side surface of the second electrode. Each of the electrodes has a length and a width, wherein the length of each respective electrode is at least four times the width of the respective electrode. The first electrode and the second electrode are positioned relative to one another such that the second gap is less than the width of the first electrode. The first electrode is positioned such that the first gap is less than the width of the first electrode. The gas supply system comprises a first gas inlet configured to inject a first gas flow into the second gap. The power supply is configured to provide an alternating current (AC) to sustain a plasma in the first gap. It is essential that the support forms a third electrode for sustaining a plasma in the second gap that the gas supply system comprises a second gas inlet downstream of the first gas inlet configured to inject a second gas flow into the plasma.

公开(公告)号：EP3046492B1

公开(公告)日：2018-08-08

申请号：EP14771834.0

申请日：2014-09-17

申请人： NMI Naturwissenschaftliches und Medizinisches Institut an der Universität Tübingen

发明人： BUCHER, Volker ,  NISCH, Wilfried ,  ROEDER, Marcel

IPC分类号： A61B18/04 ,  A61B18/14 ,  C23C26/00 ,  C23C16/00

CPC分类号： C23C28/046 ,  A61B18/14 ,  A61B2018/00083 ,  A61B2018/00107 ,  B05D1/60 ,  C23C16/26 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C28/00 ,  C23C28/042

公开(公告)号：EP3347504A1

公开(公告)日：2018-07-18

申请号：EP16766797.1

申请日：2016-09-09

申请人： Air Products and Chemicals, Inc.

发明人： LEI, Xinjian ,  KIM, Moo-Sung ,  LI, Jianheng

IPC分类号： C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/30

CPC分类号： C23C16/345 ,  C23C16/303 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274

摘要： Described herein are conformal films and methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride dielectric film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

公开(公告)号：EP3329032A1

公开(公告)日：2018-06-06

申请号：EP16748443.5

申请日：2016-07-28

申请人： Versum Materials US, LLC

发明人： LEI, Xinjian ,  KIM, Moo-Sung ,  XIAO, Manchao

IPC分类号： C23C16/34 ,  C04B41/49 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/45553 ,  C23C16/345 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

摘要： Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si-H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2.

公开(公告)号：EP3056588B1

公开(公告)日：2018-05-09

申请号：EP16155179.1

申请日：2016-02-11

申请人： United Technologies Corporation

发明人： NEWTON, Kirk C.

IPC分类号： C23C16/46 ,  C23C16/04 ,  C23C16/44

CPC分类号： C23C16/46 ,  C23C16/045 ,  C23C16/06 ,  C23C16/26 ,  C23C16/32 ,  C23C16/325 ,  C23C16/342 ,  C23C16/345 ,  C23C16/403 ,  C23C16/4401 ,  C23C16/4412

摘要： A chemical vapor deposition (CVD) reactor 50 includes a double wall vacuum processing chamber 58 with an inner wall 52 and an outer wall 54 and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation 68 covers the inner wall 52. Heating elements 66 are positioned in the interior of the processing chamber 58 to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls 52, 54 of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls 52, 54 of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.