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    COMPOUND THIN-FILM SOLAR CELL AND PRODUCTION METHOD FOR SAME
    6.
    发明公开
    COMPOUND THIN-FILM SOLAR CELL AND PRODUCTION METHOD FOR SAME 审中-公开
    联合国教科文组织

    公开(公告)号：EP2940736A1

    公开(公告)日：2015-11-04

    申请号：EP13866575.7

    申请日：2013-12-06

    申请人： Solar Frontier K.K.

    发明人： ASANO, Akihiko

    IPC分类号： H01L31/06

    CPC分类号： H01L31/0749 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/541

    摘要： The method of manufacturing a compound thin-film photovoltaic cell, includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an alumina layer at least on an element forming surface of the metal substrate by thermal oxidation; forming an insulating layer on the alumina layer; depositing a first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer.

    摘要翻译： 制造复合薄膜光伏电池的方法包括制备主要成分为铁的含有铝（Al）和铬（Cr）的金属基材，并且至少在金属的元素形成表面上形成氧化铝层 底物经热氧化; 在氧化铝层上形成绝缘层; 在所述绝缘层上沉积第一电极层; 在第一电极层上沉积复合光吸收层; 以及在所述复合光吸收层上沉积第二电极层。

    THIN-FILM PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCTION THEREOF
    7.
    发明公开
    THIN-FILM PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCTION THEREOF 审中-公开
    VERFAHREN ZUR HERSTELLUNG DAVON照相馆

    公开(公告)号：EP2903032A1

    公开(公告)日：2015-08-05

    申请号：EP13841155.8

    申请日：2013-09-27

    申请人： Kaneka Corporation

    发明人： MEGURO, Tomomi ,  YAMAMOTO, Kenji

    IPC分类号： H01L31/04 ,  H01L31/06

    CPC分类号： H01L31/077 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/545 ,  Y02E10/548

    摘要： The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film (4) having zinc oxide as a main component; a contact layer (5); a photoelectric conversion unit (6) having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer (8), in this order, on one main surface of a substrate (2). The contact layer (5) has an intrinsic crystalline semiconductor layer (51) and a p-type crystalline semiconductor layer (52) in this order from the substrate (2) side, and the intrinsic crystalline semiconductor layer (51) of the contact layer (5) and the transparent electroconductive film (4) are in contact with each other. The p-type crystalline semiconductor layer (52) of the contact layer (5) is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.

    摘要翻译： 本发明的薄膜光电转换元件包括：以氧化锌为主要成分的透明导电膜（4） 接触层（5）; 具有p型半导体层，i型半导体层和n型半导体层的光电转换单元（6）。 和背面电极层（8），依次形成在基板（2）的一个主表面上。 接触层（5）从衬底（2）侧依次具有本征晶体半导体层（51）和p型晶体半导体层（52），并且接触层的本征结晶半导体层（51） （5）和透明导电膜（4）彼此接触。 接触层（5）的p型结晶半导体层（52）优选为主要成分为选自氧化硅的硅合金的层; 氮化硅; 和碳化硅。

    Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
    9.
    发明公开
    Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device 审中-公开
    半导体叠层体，半导体装置及其制造一种制造半导体器件的半导体层叠体和方法方法

    公开(公告)号：EP2701182A2

    公开(公告)日：2014-02-26

    申请号：EP13187578.3

    申请日：2011-12-09

    申请人： TEIJIN LIMITED

    发明人： Tomizawa, Yuka ,  Ikeda, Yoshinori ,  Imamura, Tetsuya

    IPC分类号： H01L21/20 ,  H01L21/225 ,  H01L31/06 ,  H01L31/068 ,  H01L31/18 ,  H01L29/04 ,  H01L29/66

    CPC分类号： H01L29/36 ,  C01B33/02 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02686 ,  H01L21/2254 ,  H01L29/045 ,  H01L29/66757 ,  H01L29/66765 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention comprises the steps (a)-(c) described below and is characterized in that the crystal orientation of a first dopant implanted layer (52) is the same as the crystal orientation of a semiconductor layer or a base (10) that is formed of a semiconductor element. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

    摘要翻译： 提供了一种用于制造半导体器件的方法。 这样设置：其可通过所述方法获得的半导体器件; 和分散都可以在该方法中使用。 本发明的一种用于制造半导体器件的方法（500A）包括步骤（a） - （c）所示描述的和做第一掺杂剂注入层的结晶取向的特征（52）是相同的晶体取向 的半导体层或一个底座（10）的所形成的半导体元件的。 （A），其含有掺杂颗粒的分散体被应用到层或碱的特定部分。 （B）未烧结的掺杂物注入层通过干燥所施加的分散体获得。 （C）的层或基体的特定部分通过使用光照射未烧结的掺杂剂注入层掺杂有p型或n型掺杂剂，以及未烧结的掺杂物注入层被烧结，从而获得掺杂剂注入层做 集成了层或基极。

    METHODS OF FORMING SEMICONDUCTOR FILMS INCLUDING I2-II-IV-VI4 AND I2-(II,IV)-IV-VI4 SEMICONDUCTOR FILMS AND ELECTRONIC DEVICES INCLUDING THE SEMICONDUCTOR FILMS
    10.
    发明公开
    METHODS OF FORMING SEMICONDUCTOR FILMS INCLUDING I2-II-IV-VI4 AND I2-(II,IV)-IV-VI4 SEMICONDUCTOR FILMS AND ELECTRONIC DEVICES INCLUDING THE SEMICONDUCTOR FILMS 审中-公开
    用于生产半导体层与i2-II-IV-Vi4缓慢和I 2（II，IV）IV Vi4的半导体层和电子元件包括半导体层

    公开(公告)号：EP2676300A2

    公开(公告)日：2013-12-25

    申请号：EP12747692.7

    申请日：2012-02-17

    申请人： University of Washington Through Its Center for Commercialization

    发明人： HILLHOUSE, Hugh ,  KI, Wooseok

    IPC分类号： H01L31/06 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/18 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  Y02E10/50

    摘要： Embodiments of the present invention generally include methods for forming semiconductor films having nominal I2-II-IV-VI4 stoichiometry, such as CZTS or CZTSSe, using a solution of including sources of the I, II, IV, and VI elements in a liquid solvent. Precursors may be mixed in the solvent to form the solution. Metal halide salts may be used as precursors in some examples. The solution may be coated onto a substrate and annealed to yield the semiconductor film. In some examples, the source of the 'I' and 'IV' elements may contain the elements in a +2 oxidation state, while the semiconductor film may contain the 'I' element in a +1 oxidation state and the 'IV' element in a +4 oxidation state. Examples may be used to provide I2-(II,IV)-IV-VI4 films.

    摘要翻译： 本发明基因的反弹的实施方式包括用于形成具有标称I2-II-IV-Vi4的化学计量，：如CZTS或的CZTSSe半导体膜，使用的我的包括源的溶液，II，IV和VI在液体溶剂元件的方法 ， 前体可以在溶剂中混合以形成溶液。 金属卤化物盐可以用作在一些实例中的前体。 可以将溶液涂覆到基材和退火，得到半导体电影。 在一些实施例中，“I”和“IV”元素的来源“可包含在+2氧化态的元素，而半导体电影”可包含在1氧化态的“I”构件和“IV”元素 在+4氧化态。 实施例可用于提供I2（II，IV）-IV Vi4的膜。