摘要:
The invention relates to a circuit arrangement (1) for supplying a high-power functional component (20, 21) with high-voltage pulses, having: - two input connections (E1, E2) for application of an input voltage (UE), - two output connections (A1, A2) for connection to high-voltage connecting contacts of the high-power functional component (20, 21), - a plurality of charge storage modules (M1, M2,..., MN), which each contain a capacitive element (C) and are connected in series to the input connections (E1, E2) via at least one first switching device (S1) and to the output connections (A1, A2), via at least one second switching device (S2), - a control device (2) for controlling the individual charge storage modules (M1, M2,..., MN) and the first and second switching devices (S1, S2). The charge storage modules (M1, M2,..., MN) and the control device (2) are designed such that, in a charging phase, the first switching device (S1) is closed and the capacitive elements (C) in the charge storage modules (M1, M2,..., MN) are successively connected individually or in groups in series to a charging voltage, then, in a discharge phase, the first switching device (S1) is opened, and the charge storage modules (M1, M2,..., MN) are disconnected from the charging voltage and the second switching device (S2) is closed, and at least some of the capacitive elements (C) in the charge storage modules (M1, M2,..., MN) are discharged, forming a voltage pulse, when a high-power functional component (20, 21) is correctly connected to the output connections (A1, A2). The invention also relates to a method for supplying high-voltage pulses to a high-power functional component (20, 21).
摘要:
The invention relates to a high voltage switching device (1) having a charge storage assembly (3) comprising a multiplicity of charge storage modules (M1, M2, M3, M4,..., MN) connected in series, wherein in each case a specific number of the charge storage modules (M1, M2, M3, M4,..., MN) are arranged in a common subassembly housing (21, 30, 50), forming a charge storage module subassembly (B), and wherein the subassembly housings (21, 30, 50) are held in an insulated manner in a supporting framework.